Electric field induced metallic behavior in thin crystals of ferroelectric α -In2Se3

Justin R. Rodriguez, William Murray, Kazunori Fujisawa, Seng Huat Lee, Alexandra L. Kotrick, Yixuan Chen, Nathan McKee, Sora Lee, Mauricio Terrones, Susan Trolier-Mckinstry, Thomas N. Jackson, Zhiqiang Mao, Zhiwen Liu, Ying Liu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs), were prepared and measured from room to liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of electrical polarization and an electric field-induced metallic state in α-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of potential applications of semiconducting ferroelectrics.

Original languageEnglish (US)
Article number052901
JournalApplied Physics Letters
Volume117
Issue number5
DOIs
StatePublished - Aug 3 2020

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Electric field induced metallic behavior in thin crystals of ferroelectric α -In<sub>2</sub>Se<sub>3</sub>'. Together they form a unique fingerprint.

Cite this