Electric Field Writing of Ferroelectric Nano-Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Shuzhen Yang, Ren Ci Peng, Qing He, Yen Lin Huang, Yijing Huang, Jan Chi Yang, Tianzhe Chen, Jingwen Guo, Long Qing Chen, Ying Hao Chu, Ce Wen Nan, Pu Yu

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2 Scopus citations

Abstract

Conducting ferroelectric domain walls attract a wide range of research interest due to their promising applications in nanoelectronics. In this study, we reveal an unexpected enhanced conductivity near the well-aligned 71° nonpolar domain walls in BiFeO3. Such an interfacial conductivity is induced by the creation of up-polarized nano-domains near the 71° domain walls, as revealed by the combination of the piezo-response force microscopy (PFM) and conducting atomic force microscopy (c-AFM) imaging techniques, as well as phase-field simulations. The upward polarized domains are suggested to lower the Schottky barrier at the interface between the tip and sample surface, and then give rise to the enhanced interfacial conductivity. The result provides a new strategy to tune the local conductance in ferroelectric materials and opens up new opportunities to design novel nanoelectronic devices.

Original languageEnglish (US)
Article number1800130
JournalAnnalen der Physik
Volume530
Issue number8
DOIs
StatePublished - Aug 2018

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Yang, S., Peng, R. C., He, Q., Huang, Y. L., Huang, Y., Yang, J. C., Chen, T., Guo, J., Chen, L. Q., Chu, Y. H., Nan, C. W., & Yu, P. (2018). Electric Field Writing of Ferroelectric Nano-Domains Near 71° Domain Walls with Switchable Interfacial Conductivity. Annalen der Physik, 530(8), [1800130]. https://doi.org/10.1002/andp.201800130