Electric Field Writing of Ferroelectric Nano-Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Shuzhen Yang, Ren Ci Peng, Qing He, Yen Lin Huang, Yijing Huang, Jan Chi Yang, Tianzhe Chen, Jingwen Guo, Long-qing Chen, Ying Hao Chu, Ce Wen Nan, Pu Yu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Conducting ferroelectric domain walls attract a wide range of research interest due to their promising applications in nanoelectronics. In this study, we reveal an unexpected enhanced conductivity near the well-aligned 71° nonpolar domain walls in BiFeO 3 . Such an interfacial conductivity is induced by the creation of up-polarized nano-domains near the 71° domain walls, as revealed by the combination of the piezo-response force microscopy (PFM) and conducting atomic force microscopy (c-AFM) imaging techniques, as well as phase-field simulations. The upward polarized domains are suggested to lower the Schottky barrier at the interface between the tip and sample surface, and then give rise to the enhanced interfacial conductivity. The result provides a new strategy to tune the local conductance in ferroelectric materials and opens up new opportunities to design novel nanoelectronic devices.

Original languageEnglish (US)
Article number1800130
JournalAnnalen der Physik
Volume530
Issue number8
DOIs
StatePublished - Aug 1 2018

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domain wall
conductivity
electric fields
conduction
ferroelectric materials
imaging techniques
atomic force microscopy
microscopy
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Yang, Shuzhen ; Peng, Ren Ci ; He, Qing ; Huang, Yen Lin ; Huang, Yijing ; Yang, Jan Chi ; Chen, Tianzhe ; Guo, Jingwen ; Chen, Long-qing ; Chu, Ying Hao ; Nan, Ce Wen ; Yu, Pu. / Electric Field Writing of Ferroelectric Nano-Domains Near 71° Domain Walls with Switchable Interfacial Conductivity. In: Annalen der Physik. 2018 ; Vol. 530, No. 8.
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abstract = "Conducting ferroelectric domain walls attract a wide range of research interest due to their promising applications in nanoelectronics. In this study, we reveal an unexpected enhanced conductivity near the well-aligned 71° nonpolar domain walls in BiFeO 3 . Such an interfacial conductivity is induced by the creation of up-polarized nano-domains near the 71° domain walls, as revealed by the combination of the piezo-response force microscopy (PFM) and conducting atomic force microscopy (c-AFM) imaging techniques, as well as phase-field simulations. The upward polarized domains are suggested to lower the Schottky barrier at the interface between the tip and sample surface, and then give rise to the enhanced interfacial conductivity. The result provides a new strategy to tune the local conductance in ferroelectric materials and opens up new opportunities to design novel nanoelectronic devices.",
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Yang, S, Peng, RC, He, Q, Huang, YL, Huang, Y, Yang, JC, Chen, T, Guo, J, Chen, L, Chu, YH, Nan, CW & Yu, P 2018, 'Electric Field Writing of Ferroelectric Nano-Domains Near 71° Domain Walls with Switchable Interfacial Conductivity', Annalen der Physik, vol. 530, no. 8, 1800130. https://doi.org/10.1002/andp.201800130

Electric Field Writing of Ferroelectric Nano-Domains Near 71° Domain Walls with Switchable Interfacial Conductivity. / Yang, Shuzhen; Peng, Ren Ci; He, Qing; Huang, Yen Lin; Huang, Yijing; Yang, Jan Chi; Chen, Tianzhe; Guo, Jingwen; Chen, Long-qing; Chu, Ying Hao; Nan, Ce Wen; Yu, Pu.

In: Annalen der Physik, Vol. 530, No. 8, 1800130, 01.08.2018.

Research output: Contribution to journalArticle

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AU - Yang, Shuzhen

AU - Peng, Ren Ci

AU - He, Qing

AU - Huang, Yen Lin

AU - Huang, Yijing

AU - Yang, Jan Chi

AU - Chen, Tianzhe

AU - Guo, Jingwen

AU - Chen, Long-qing

AU - Chu, Ying Hao

AU - Nan, Ce Wen

AU - Yu, Pu

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