Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers

C. E. Finlayson, A. Amezcua-Correa, P. J.A. Sazio, N. F. Baril, J. V. Badding

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Abstract

Extreme aspect ratio tubes and wires of polycrystalline silicon and germanium have been deposited within silica microstructured optical fibers using high-pressure precursors, demonstrating the potential of a platform technology for the development of in-fiber optoelectronics. Microstructural studies of the deposited material using Raman spectroscopy show effects due to strain between core and cladding and the presence of amorphous and polycrystalline phases for silicon. Germanium, in contrast, is more crystalline and less strained. This in-fiber device geometry is utilized for two- and three-terminal electrical characterization of the key parameters of resistivity and carrier type, mobility and concentration.

Original languageEnglish (US)
Article number132110
JournalApplied Physics Letters
Volume90
Issue number13
DOIs
Publication statusPublished - Apr 8 2007

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Finlayson, C. E., Amezcua-Correa, A., Sazio, P. J. A., Baril, N. F., & Badding, J. V. (2007). Electrical and Raman characterization of silicon and germanium-filled microstructured optical fibers. Applied Physics Letters, 90(13), [132110]. https://doi.org/10.1063/1.2713755