Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

Xue Feng Zhang, Li Wang, Jie Liu, Lai Wei, Jian Xu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Electrical properties of an AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.

Original languageEnglish (US)
Article number017202
JournalChinese Physics B
Volume22
Issue number1
DOIs
StatePublished - Jan 1 2013

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high electron mobility transistors
electron mobility
cryogenics
cryogenic temperature
electron scattering
sapphire
transistors
electrical properties
saturation
heating
temperature
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Zhang, Xue Feng ; Wang, Li ; Liu, Jie ; Wei, Lai ; Xu, Jian. / Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation. In: Chinese Physics B. 2013 ; Vol. 22, No. 1.
@article{5b084c24a9fd4b30a1025b14c503a76b,
title = "Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation",
abstract = "Electrical properties of an AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.",
author = "Zhang, {Xue Feng} and Li Wang and Jie Liu and Lai Wei and Jian Xu",
year = "2013",
month = "1",
day = "1",
doi = "10.1088/1674-1056/22/1/017202",
language = "English (US)",
volume = "22",
journal = "Chinese Physics B",
issn = "1674-1056",
publisher = "IOP Publishing Ltd.",
number = "1",

}

Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation. / Zhang, Xue Feng; Wang, Li; Liu, Jie; Wei, Lai; Xu, Jian.

In: Chinese Physics B, Vol. 22, No. 1, 017202, 01.01.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

AU - Zhang, Xue Feng

AU - Wang, Li

AU - Liu, Jie

AU - Wei, Lai

AU - Xu, Jian

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Electrical properties of an AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.

AB - Electrical properties of an AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.

UR - http://www.scopus.com/inward/record.url?scp=84873356186&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873356186&partnerID=8YFLogxK

U2 - 10.1088/1674-1056/22/1/017202

DO - 10.1088/1674-1056/22/1/017202

M3 - Article

AN - SCOPUS:84873356186

VL - 22

JO - Chinese Physics B

JF - Chinese Physics B

SN - 1674-1056

IS - 1

M1 - 017202

ER -