Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

Xue Feng Zhang, Li Wang, Jie Liu, Lai Wei, Jian Xu

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Abstract

Electrical properties of an AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.

Original languageEnglish (US)
Article number017202
JournalChinese Physics B
Volume22
Issue number1
DOIs
StatePublished - Jan 1 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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