Electrical characteristics of GaAs MIS Schottky diodes

S. Ashok, J. M. Borrego, R. J. Gutmann

Research output: Contribution to journalArticlepeer-review

126 Scopus citations

Abstract

The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of GaAs metal-insulator-semiconductor (MIS) Schottky barrier diodes are investigated over a wide temperature range and compared with MS diodes. The effects of the insulating layer on barrier height and carrier transport are delineated by an activation energy analysis. Excess currents observed at low forward and reverse bias have also been analyzed and their cause identified. A capacitance anomaly consistently noticed in MIS Schottky barriers is resolved by stipulating a non-uniform interfacial layer, and a self-consistent model of the GaAs MIS Schottky barrier is developed by analyzing I-V and C-V data of both MIS and MS diodes.

Original languageEnglish (US)
Pages (from-to)621-631
Number of pages11
JournalSolid State Electronics
Volume22
Issue number7
DOIs
StatePublished - Jul 1979

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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