Electrical characterization and analysis of the degradation of electrode Schottky barriers in BaTiO3 dielectric materials due to hydrogen exposure

Damoon Sohrabi Baba Heidary, Weiguo Qu, Clive A. Randall

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Hydrogen gas creates a highly damaging environment that degrades electrical properties in oxide based dielectrics and piezoelectrics. In this study, the degradation resistivity due to hydrogen gas in a barium titanate X7R dielectric is designed and processed for base metal electrode capacitors. The present paper is devoted to I-V measurements and the loss of resistivity in the electrode Schottky barriers. The DC degradation and asymmetries noted in I-V forward and reverse biasing conditions were assumed to be hydrogen ion interstitials, locally creating donor substitutions. Thermionic and field emission conductivity mechanisms are applied to model the I-V data; the conductivity is controlled by the Schottky barrier heights and hydrogen ions localizing at the interfaces. Finally, a mechanism was proposed for resistivity degradation due to exposure to hydrogen gas. The proposed mechanism predicts the degradation should be reversible, and its validity was examined by recovery tests.

Original languageEnglish (US)
Article number124104
JournalJournal of Applied Physics
Volume117
Issue number12
DOIs
StatePublished - Mar 28 2015

Fingerprint

degradation
electrodes
hydrogen
hydrogen ions
electrical resistivity
gases
conductivity
thermionic emission
barium
field emission
capacitors
interstitials
direct current
recovery
electrical properties
asymmetry
substitutes
oxides
metals
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{c358d4c285e54457a0e446fef1af0eae,
title = "Electrical characterization and analysis of the degradation of electrode Schottky barriers in BaTiO3 dielectric materials due to hydrogen exposure",
abstract = "Hydrogen gas creates a highly damaging environment that degrades electrical properties in oxide based dielectrics and piezoelectrics. In this study, the degradation resistivity due to hydrogen gas in a barium titanate X7R dielectric is designed and processed for base metal electrode capacitors. The present paper is devoted to I-V measurements and the loss of resistivity in the electrode Schottky barriers. The DC degradation and asymmetries noted in I-V forward and reverse biasing conditions were assumed to be hydrogen ion interstitials, locally creating donor substitutions. Thermionic and field emission conductivity mechanisms are applied to model the I-V data; the conductivity is controlled by the Schottky barrier heights and hydrogen ions localizing at the interfaces. Finally, a mechanism was proposed for resistivity degradation due to exposure to hydrogen gas. The proposed mechanism predicts the degradation should be reversible, and its validity was examined by recovery tests.",
author = "Heidary, {Damoon Sohrabi Baba} and Weiguo Qu and Randall, {Clive A.}",
year = "2015",
month = "3",
day = "28",
doi = "10.1063/1.4915937",
language = "English (US)",
volume = "117",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

Electrical characterization and analysis of the degradation of electrode Schottky barriers in BaTiO3 dielectric materials due to hydrogen exposure. / Heidary, Damoon Sohrabi Baba; Qu, Weiguo; Randall, Clive A.

In: Journal of Applied Physics, Vol. 117, No. 12, 124104, 28.03.2015.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical characterization and analysis of the degradation of electrode Schottky barriers in BaTiO3 dielectric materials due to hydrogen exposure

AU - Heidary, Damoon Sohrabi Baba

AU - Qu, Weiguo

AU - Randall, Clive A.

PY - 2015/3/28

Y1 - 2015/3/28

N2 - Hydrogen gas creates a highly damaging environment that degrades electrical properties in oxide based dielectrics and piezoelectrics. In this study, the degradation resistivity due to hydrogen gas in a barium titanate X7R dielectric is designed and processed for base metal electrode capacitors. The present paper is devoted to I-V measurements and the loss of resistivity in the electrode Schottky barriers. The DC degradation and asymmetries noted in I-V forward and reverse biasing conditions were assumed to be hydrogen ion interstitials, locally creating donor substitutions. Thermionic and field emission conductivity mechanisms are applied to model the I-V data; the conductivity is controlled by the Schottky barrier heights and hydrogen ions localizing at the interfaces. Finally, a mechanism was proposed for resistivity degradation due to exposure to hydrogen gas. The proposed mechanism predicts the degradation should be reversible, and its validity was examined by recovery tests.

AB - Hydrogen gas creates a highly damaging environment that degrades electrical properties in oxide based dielectrics and piezoelectrics. In this study, the degradation resistivity due to hydrogen gas in a barium titanate X7R dielectric is designed and processed for base metal electrode capacitors. The present paper is devoted to I-V measurements and the loss of resistivity in the electrode Schottky barriers. The DC degradation and asymmetries noted in I-V forward and reverse biasing conditions were assumed to be hydrogen ion interstitials, locally creating donor substitutions. Thermionic and field emission conductivity mechanisms are applied to model the I-V data; the conductivity is controlled by the Schottky barrier heights and hydrogen ions localizing at the interfaces. Finally, a mechanism was proposed for resistivity degradation due to exposure to hydrogen gas. The proposed mechanism predicts the degradation should be reversible, and its validity was examined by recovery tests.

UR - http://www.scopus.com/inward/record.url?scp=84926336833&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84926336833&partnerID=8YFLogxK

U2 - 10.1063/1.4915937

DO - 10.1063/1.4915937

M3 - Article

VL - 117

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 124104

ER -