In this study we explore the silicon substrate damage produced by Cl2- and HBr-based reactive ion polycrystalline silicon overetches used in the definition of polycrystalline Si / SiO2 / single-crystal Si structures. The damage-caused traps, examined by means of deep-level transient spectroscopy, in the p-type Si are found to have concentrations that can exceed one tenth that of the boron dopant, and are detectable as far as ~ 10 μm from the SiO2 / Si interface. The concentration and depth of these traps are shown to depend on the polycrystalline Si overetch selectivity, initial oxide thickness, and on the magnetic field strength as well as the presence of hydrogen.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Apr 1993|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering