Electrical Characterization of the Si Substrate in Magnetically Enhanced or Conventional Reactive-Ion-Etch-Exposed SiO2/p-Si Structures

O. O. Awadelkarim; T. Gu; R. A. Ditizio; P. I. Mikulan; S. J. Fonash; J. F. Rembetski; Y. D. Chan

doi:10.1109/55.215162

Electrical Characterization of the Si Substrate in Magnetically Enhanced or Conventional Reactive-Ion-Etch-Exposed SiO₂/p-Si Structures

O. O. Awadelkarim, T. Gu, R. A. Ditizio, P. I. Mikulan, S. J. Fonash, J. F. Rembetski, Y. D. Chan

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3 Scopus citations

Abstract

In this study we explore the silicon substrate damage produced by Cl₂- and HBr-based reactive ion polycrystalline silicon overetches used in the definition of polycrystalline Si / SiO₂ / single-crystal Si structures. The damage-caused traps, examined by means of deep-level transient spectroscopy, in the p-type Si are found to have concentrations that can exceed one tenth that of the boron dopant, and are detectable as far as ~ 10 μm from the SiO₂ / Si interface. The concentration and depth of these traps are shown to depend on the polycrystalline Si overetch selectivity, initial oxide thickness, and on the magnetic field strength as well as the presence of hydrogen.

Original language	English (US)
Pages (from-to)	167-169
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	14
Issue number	4
DOIs	https://doi.org/10.1109/55.215162
State	Published - Apr 1993

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Electrical Characterization of the Si Substrate in Magnetically Enhanced or Conventional Reactive-Ion-Etch-Exposed SiO2/p-Si Structures",

abstract = "In this study we explore the silicon substrate damage produced by Cl2- and HBr-based reactive ion polycrystalline silicon overetches used in the definition of polycrystalline Si / SiO2 / single-crystal Si structures. The damage-caused traps, examined by means of deep-level transient spectroscopy, in the p-type Si are found to have concentrations that can exceed one tenth that of the boron dopant, and are detectable as far as ~ 10 μm from the SiO2 / Si interface. The concentration and depth of these traps are shown to depend on the polycrystalline Si overetch selectivity, initial oxide thickness, and on the magnetic field strength as well as the presence of hydrogen.",

author = "Awadelkarim, {O. O.} and T. Gu and Ditizio, {R. A.} and Mikulan, {P. I.} and Fonash, {S. J.} and Rembetski, {J. F.} and Chan, {Y. D.}",

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T1 - Electrical Characterization of the Si Substrate in Magnetically Enhanced or Conventional Reactive-Ion-Etch-Exposed SiO2/p-Si Structures

AU - Awadelkarim, O. O.

AU - Gu, T.

AU - Ditizio, R. A.

AU - Mikulan, P. I.

AU - Fonash, S. J.

AU - Rembetski, J. F.

AU - Chan, Y. D.

PY - 1993/4

Y1 - 1993/4

N2 - In this study we explore the silicon substrate damage produced by Cl2- and HBr-based reactive ion polycrystalline silicon overetches used in the definition of polycrystalline Si / SiO2 / single-crystal Si structures. The damage-caused traps, examined by means of deep-level transient spectroscopy, in the p-type Si are found to have concentrations that can exceed one tenth that of the boron dopant, and are detectable as far as ~ 10 μm from the SiO2 / Si interface. The concentration and depth of these traps are shown to depend on the polycrystalline Si overetch selectivity, initial oxide thickness, and on the magnetic field strength as well as the presence of hydrogen.

AB - In this study we explore the silicon substrate damage produced by Cl2- and HBr-based reactive ion polycrystalline silicon overetches used in the definition of polycrystalline Si / SiO2 / single-crystal Si structures. The damage-caused traps, examined by means of deep-level transient spectroscopy, in the p-type Si are found to have concentrations that can exceed one tenth that of the boron dopant, and are detectable as far as ~ 10 μm from the SiO2 / Si interface. The concentration and depth of these traps are shown to depend on the polycrystalline Si overetch selectivity, initial oxide thickness, and on the magnetic field strength as well as the presence of hydrogen.

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Electrical Characterization of the Si Substrate in Magnetically Enhanced or Conventional Reactive-Ion-Etch-Exposed SiO₂/p-Si Structures

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