Electrical conduction in thin film diamond

K. Srikanth; S. Ashok; A. Badzian; T. Badzian; R. Messier

doi:10.1016/0040-6090(88)90132-0

Electrical conduction in thin film diamond

K. Srikanth, S. Ashok, A. Badzian, T. Badzian, R. Messier

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The electrical conduction in thin film diamond synthesized by microwave plasma enehanced chemical vapor deposition has been studied with metal-diamond-silicon metal-insulator-semiconductor structures. Measurements over a wide temperature range provide evidence for space-charge-limited current in the presence of traps. An exponential distribution of traps with a peak value of the order of 3 × 10²⁰ cm^-3 eV^-1 has been deduced from the current-voltage-temperature data.

Original language	English (US)
Pages (from-to)	187-190
Number of pages	4
Journal	Thin Solid Films
Volume	164
Issue number	C
DOIs	https://doi.org/10.1016/0040-6090(88)90132-0
State	Published - Oct 1988

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(88)90132-0

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title = "Electrical conduction in thin film diamond",

abstract = "The electrical conduction in thin film diamond synthesized by microwave plasma enehanced chemical vapor deposition has been studied with metal-diamond-silicon metal-insulator-semiconductor structures. Measurements over a wide temperature range provide evidence for space-charge-limited current in the presence of traps. An exponential distribution of traps with a peak value of the order of 3 × 1020 cm-3 eV-1 has been deduced from the current-voltage-temperature data.",

author = "K. Srikanth and S. Ashok and A. Badzian and T. Badzian and R. Messier",

note = "Funding Information: This work was supported by the Office of Naval Research, Materials Division, under Contracts N00014-84-K-0749 and N00014-86-K-0238.",

year = "1988",

month = oct,

doi = "10.1016/0040-6090(88)90132-0",

language = "English (US)",

volume = "164",

pages = "187--190",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

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T1 - Electrical conduction in thin film diamond

AU - Srikanth, K.

AU - Ashok, S.

AU - Badzian, A.

AU - Badzian, T.

AU - Messier, R.

N1 - Funding Information: This work was supported by the Office of Naval Research, Materials Division, under Contracts N00014-84-K-0749 and N00014-86-K-0238.

PY - 1988/10

Y1 - 1988/10

N2 - The electrical conduction in thin film diamond synthesized by microwave plasma enehanced chemical vapor deposition has been studied with metal-diamond-silicon metal-insulator-semiconductor structures. Measurements over a wide temperature range provide evidence for space-charge-limited current in the presence of traps. An exponential distribution of traps with a peak value of the order of 3 × 1020 cm-3 eV-1 has been deduced from the current-voltage-temperature data.

AB - The electrical conduction in thin film diamond synthesized by microwave plasma enehanced chemical vapor deposition has been studied with metal-diamond-silicon metal-insulator-semiconductor structures. Measurements over a wide temperature range provide evidence for space-charge-limited current in the presence of traps. An exponential distribution of traps with a peak value of the order of 3 × 1020 cm-3 eV-1 has been deduced from the current-voltage-temperature data.

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UR - http://www.scopus.com/inward/citedby.url?scp=0024088067&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(88)90132-0

DO - 10.1016/0040-6090(88)90132-0

M3 - Article

AN - SCOPUS:0024088067

SN - 0040-6090

VL - 164

SP - 187

EP - 190

JO - Thin Solid Films

JF - Thin Solid Films

IS - C

ER -

Electrical conduction in thin film diamond

Abstract

All Science Journal Classification (ASJC) codes

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