Electrical instabilities and 1/f noise in organic pentacene thin film transistors

P. V. Necliudov, M. Shur, D. J. Gundlach, T. N. Jackson

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We report on the influence of Bias-Temperature Stress (BTS) on the pentacene Thin Film Transistors (TFTs) electrical characteristics and on their 1/f noise level. The gate BTS primarily affects the TFT threshold voltage, leaving both mobility and sub-threshold slope values almost unchanged. The degree of the threshold voltage shift induced by the positive or negative BTS depends on the TFT design and the BTS parameters. The current-voltage characteristics time dependence of the organic TFTs, subjected to the BTS, resembles that for amorphous-Si TFTs. The results of the 1/f noise measurements in the organic TFTs allowed us to conclude that the gate BTS primarily affects the TFT contact regions, resulting in the increase of both the contact noise and the contact resistance.

Original languageEnglish (US)
Pages (from-to)JJ7.10.1-JJ7.10.6
JournalMaterials Research Society Symposium - Proceedings
Volume660
StatePublished - Jan 1 2001

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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