Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical-chemical vapor transport method

Mark Andrew Fanton, Q. Li, A. Y. Polyakov, M. Skowronski

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Concentrations of nitrogen shallow donors, boron shallow acceptors, charge carriers, and electron traps were measured as a function of position along the growth axis in a series of undoped 6H-SiC boules grown by sublimation method with and without addition of hydrogen to the growth atmosphere. Elemental analysis by secondary ion mass spectrometry and measurements of electrical properties indicate that the addition of hydrogen suppresses nitrogen incorporation and formation of all electron traps. Concentration of boron is not affected by hydrogen presence. The addition of hydrogen to the growth ambient improves the uniformity of nitrogen incorporation and deep trap distribution along the growth axis. The results are interpreted as due to increased carbon transport and corresponding shift of crystal stoichiometry toward carbon-rich side of the SiC existence range.

Original languageEnglish (US)
Pages (from-to)314-318
Number of pages5
JournalJournal of Crystal Growth
Volume300
Issue number2
DOIs
StatePublished - Mar 15 2007

Fingerprint

Hydrogen
Electric properties
Vapors
electrical properties
vapors
Electron traps
Crystals
Boron
Nitrogen
traps
hydrogen
nitrogen
crystals
boron
Carbon
boules
carbon
Sublimation
Secondary ion mass spectrometry
Charge carriers

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

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abstract = "Concentrations of nitrogen shallow donors, boron shallow acceptors, charge carriers, and electron traps were measured as a function of position along the growth axis in a series of undoped 6H-SiC boules grown by sublimation method with and without addition of hydrogen to the growth atmosphere. Elemental analysis by secondary ion mass spectrometry and measurements of electrical properties indicate that the addition of hydrogen suppresses nitrogen incorporation and formation of all electron traps. Concentration of boron is not affected by hydrogen presence. The addition of hydrogen to the growth ambient improves the uniformity of nitrogen incorporation and deep trap distribution along the growth axis. The results are interpreted as due to increased carbon transport and corresponding shift of crystal stoichiometry toward carbon-rich side of the SiC existence range.",
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Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical-chemical vapor transport method. / Fanton, Mark Andrew; Li, Q.; Polyakov, A. Y.; Skowronski, M.

In: Journal of Crystal Growth, Vol. 300, No. 2, 15.03.2007, p. 314-318.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical-chemical vapor transport method

AU - Fanton, Mark Andrew

AU - Li, Q.

AU - Polyakov, A. Y.

AU - Skowronski, M.

PY - 2007/3/15

Y1 - 2007/3/15

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AB - Concentrations of nitrogen shallow donors, boron shallow acceptors, charge carriers, and electron traps were measured as a function of position along the growth axis in a series of undoped 6H-SiC boules grown by sublimation method with and without addition of hydrogen to the growth atmosphere. Elemental analysis by secondary ion mass spectrometry and measurements of electrical properties indicate that the addition of hydrogen suppresses nitrogen incorporation and formation of all electron traps. Concentration of boron is not affected by hydrogen presence. The addition of hydrogen to the growth ambient improves the uniformity of nitrogen incorporation and deep trap distribution along the growth axis. The results are interpreted as due to increased carbon transport and corresponding shift of crystal stoichiometry toward carbon-rich side of the SiC existence range.

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