Abstract
Concentrations of nitrogen shallow donors, boron shallow acceptors, charge carriers, and electron traps were measured as a function of position along the growth axis in a series of undoped 6H-SiC boules grown by sublimation method with and without addition of hydrogen to the growth atmosphere. Elemental analysis by secondary ion mass spectrometry and measurements of electrical properties indicate that the addition of hydrogen suppresses nitrogen incorporation and formation of all electron traps. Concentration of boron is not affected by hydrogen presence. The addition of hydrogen to the growth ambient improves the uniformity of nitrogen incorporation and deep trap distribution along the growth axis. The results are interpreted as due to increased carbon transport and corresponding shift of crystal stoichiometry toward carbon-rich side of the SiC existence range.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 314-318 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 300 |
| Issue number | 2 |
| DOIs | |
| State | Published - Mar 15 2007 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical-chemical vapor transport method. / Fanton, Mark Andrew; Li, Q.; Polyakov, A. Y.; Skowronski, M.
In: Journal of Crystal Growth, Vol. 300, No. 2, 15.03.2007, p. 314-318.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical-chemical vapor transport method
AU - Fanton, Mark Andrew
AU - Li, Q.
AU - Polyakov, A. Y.
AU - Skowronski, M.
PY - 2007/3/15
Y1 - 2007/3/15
N2 - Concentrations of nitrogen shallow donors, boron shallow acceptors, charge carriers, and electron traps were measured as a function of position along the growth axis in a series of undoped 6H-SiC boules grown by sublimation method with and without addition of hydrogen to the growth atmosphere. Elemental analysis by secondary ion mass spectrometry and measurements of electrical properties indicate that the addition of hydrogen suppresses nitrogen incorporation and formation of all electron traps. Concentration of boron is not affected by hydrogen presence. The addition of hydrogen to the growth ambient improves the uniformity of nitrogen incorporation and deep trap distribution along the growth axis. The results are interpreted as due to increased carbon transport and corresponding shift of crystal stoichiometry toward carbon-rich side of the SiC existence range.
AB - Concentrations of nitrogen shallow donors, boron shallow acceptors, charge carriers, and electron traps were measured as a function of position along the growth axis in a series of undoped 6H-SiC boules grown by sublimation method with and without addition of hydrogen to the growth atmosphere. Elemental analysis by secondary ion mass spectrometry and measurements of electrical properties indicate that the addition of hydrogen suppresses nitrogen incorporation and formation of all electron traps. Concentration of boron is not affected by hydrogen presence. The addition of hydrogen to the growth ambient improves the uniformity of nitrogen incorporation and deep trap distribution along the growth axis. The results are interpreted as due to increased carbon transport and corresponding shift of crystal stoichiometry toward carbon-rich side of the SiC existence range.
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U2 - 10.1016/j.jcrysgro.2007.01.002
DO - 10.1016/j.jcrysgro.2007.01.002
M3 - Article
AN - SCOPUS:33847766199
VL - 300
SP - 314
EP - 318
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 2
ER -