Electrical properties and phase transformations in antiferroelectric lead zirconate thin films

K. Yamakawa, S. Trolier-McKinstry, J. P. Dougherty

Research output: Contribution to conferencePaper

5 Citations (Scopus)

Abstract

Field-induced phase transformations in antiferroelectric lead zirconate thin films were investigated at various temperatures. Films with (240) preferred orientations were prepared on Pt-coated Si substrates by a reactive magnetron co-sputtering method followed by rapid thermal annealing. Crystallization temperatures between 600 and 700 °C resulted in square double hysteresis loops with large values of the maximum polarization (up to 70 μC/cm2). These very large values of induced polarization make such films attractive for energy storage applications. The phase transformations between the orthorhombic antiferroelectric phase and a rhombohedral ferroelectric phase, as well as ferroelectric-ferroelectric transitions were observed by studying the dielectric properties and the polarization-electric field hysteresis as a function of temperature. The behavior of the films is largely similar to that observed in single crystals, although the antiferroelectric-paraelectric phase transition temperature was increased by approximately 20 °C. Work on the strain change accompanying the field-induced transformation will also be reported.

Original languageEnglish (US)
Pages405-408
Number of pages4
StatePublished - Dec 1 1996
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: Aug 18 1996Aug 21 1996

Other

OtherProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period8/18/968/21/96

Fingerprint

Ferroelectric materials
Electric properties
Lead
Phase transitions
Polarization
Thin films
Rapid thermal annealing
Hysteresis loops
Crystallization
Dielectric properties
Temperature
Energy storage
Superconducting transition temperature
Sputtering
Hysteresis
Electric fields
Single crystals
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Yamakawa, K., Trolier-McKinstry, S., & Dougherty, J. P. (1996). Electrical properties and phase transformations in antiferroelectric lead zirconate thin films. 405-408. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .
Yamakawa, K. ; Trolier-McKinstry, S. ; Dougherty, J. P. / Electrical properties and phase transformations in antiferroelectric lead zirconate thin films. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .4 p.
@conference{0dba1f7273db4b31a94e54288b341e50,
title = "Electrical properties and phase transformations in antiferroelectric lead zirconate thin films",
abstract = "Field-induced phase transformations in antiferroelectric lead zirconate thin films were investigated at various temperatures. Films with (240) preferred orientations were prepared on Pt-coated Si substrates by a reactive magnetron co-sputtering method followed by rapid thermal annealing. Crystallization temperatures between 600 and 700 °C resulted in square double hysteresis loops with large values of the maximum polarization (up to 70 μC/cm2). These very large values of induced polarization make such films attractive for energy storage applications. The phase transformations between the orthorhombic antiferroelectric phase and a rhombohedral ferroelectric phase, as well as ferroelectric-ferroelectric transitions were observed by studying the dielectric properties and the polarization-electric field hysteresis as a function of temperature. The behavior of the films is largely similar to that observed in single crystals, although the antiferroelectric-paraelectric phase transition temperature was increased by approximately 20 °C. Work on the strain change accompanying the field-induced transformation will also be reported.",
author = "K. Yamakawa and S. Trolier-McKinstry and Dougherty, {J. P.}",
year = "1996",
month = "12",
day = "1",
language = "English (US)",
pages = "405--408",
note = "Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) ; Conference date: 18-08-1996 Through 21-08-1996",

}

Yamakawa, K, Trolier-McKinstry, S & Dougherty, JP 1996, 'Electrical properties and phase transformations in antiferroelectric lead zirconate thin films', Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, 8/18/96 - 8/21/96 pp. 405-408.

Electrical properties and phase transformations in antiferroelectric lead zirconate thin films. / Yamakawa, K.; Trolier-McKinstry, S.; Dougherty, J. P.

1996. 405-408 Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Electrical properties and phase transformations in antiferroelectric lead zirconate thin films

AU - Yamakawa, K.

AU - Trolier-McKinstry, S.

AU - Dougherty, J. P.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Field-induced phase transformations in antiferroelectric lead zirconate thin films were investigated at various temperatures. Films with (240) preferred orientations were prepared on Pt-coated Si substrates by a reactive magnetron co-sputtering method followed by rapid thermal annealing. Crystallization temperatures between 600 and 700 °C resulted in square double hysteresis loops with large values of the maximum polarization (up to 70 μC/cm2). These very large values of induced polarization make such films attractive for energy storage applications. The phase transformations between the orthorhombic antiferroelectric phase and a rhombohedral ferroelectric phase, as well as ferroelectric-ferroelectric transitions were observed by studying the dielectric properties and the polarization-electric field hysteresis as a function of temperature. The behavior of the films is largely similar to that observed in single crystals, although the antiferroelectric-paraelectric phase transition temperature was increased by approximately 20 °C. Work on the strain change accompanying the field-induced transformation will also be reported.

AB - Field-induced phase transformations in antiferroelectric lead zirconate thin films were investigated at various temperatures. Films with (240) preferred orientations were prepared on Pt-coated Si substrates by a reactive magnetron co-sputtering method followed by rapid thermal annealing. Crystallization temperatures between 600 and 700 °C resulted in square double hysteresis loops with large values of the maximum polarization (up to 70 μC/cm2). These very large values of induced polarization make such films attractive for energy storage applications. The phase transformations between the orthorhombic antiferroelectric phase and a rhombohedral ferroelectric phase, as well as ferroelectric-ferroelectric transitions were observed by studying the dielectric properties and the polarization-electric field hysteresis as a function of temperature. The behavior of the films is largely similar to that observed in single crystals, although the antiferroelectric-paraelectric phase transition temperature was increased by approximately 20 °C. Work on the strain change accompanying the field-induced transformation will also be reported.

UR - http://www.scopus.com/inward/record.url?scp=0030369669&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030369669&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030369669

SP - 405

EP - 408

ER -

Yamakawa K, Trolier-McKinstry S, Dougherty JP. Electrical properties and phase transformations in antiferroelectric lead zirconate thin films. 1996. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .