Electrical properties and phase transformations in antiferroelectric lead zirconate thin films

K. Yamakawa, S. Trolier-McKinstry, J. P. Dougherty

Research output: Contribution to conferencePaper

5 Scopus citations

Abstract

Field-induced phase transformations in antiferroelectric lead zirconate thin films were investigated at various temperatures. Films with (240) preferred orientations were prepared on Pt-coated Si substrates by a reactive magnetron co-sputtering method followed by rapid thermal annealing. Crystallization temperatures between 600 and 700 °C resulted in square double hysteresis loops with large values of the maximum polarization (up to 70 μC/cm2). These very large values of induced polarization make such films attractive for energy storage applications. The phase transformations between the orthorhombic antiferroelectric phase and a rhombohedral ferroelectric phase, as well as ferroelectric-ferroelectric transitions were observed by studying the dielectric properties and the polarization-electric field hysteresis as a function of temperature. The behavior of the films is largely similar to that observed in single crystals, although the antiferroelectric-paraelectric phase transition temperature was increased by approximately 20 °C. Work on the strain change accompanying the field-induced transformation will also be reported.

Original languageEnglish (US)
Pages405-408
Number of pages4
StatePublished - Dec 1 1996
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: Aug 18 1996Aug 21 1996

Other

OtherProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period8/18/968/21/96

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Yamakawa, K., Trolier-McKinstry, S., & Dougherty, J. P. (1996). Electrical properties and phase transformations in antiferroelectric lead zirconate thin films. 405-408. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .