Electrical properties of amorphous BaTi4 O9 films grown on Cu / Ti / SiO2/ Si substrates using RF magnetron sputtering

Jin Seong Kim, Min Gyu Kang, Sang Hyo Kweon, Guifang Han, Chong Yun Kang, Jung Rak Yun, Young Hun Jeong, Jong Hoo Paik, Sahn Nahm

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Amorphous BaTi4O9 (BT4) films for use as capacitors embedded in PCB substrates were grown on Cu electrodes at low temperatures (≤ 200°C). The dielectric constant (k) of the amorphous BT4 film grown at room temperature (RT) was 38, and its dissipation factor was 3.2% at 100 kHz. A similar k value was obtained at radio-frequency ranges, with a quality factor of 143 at 1.0 GHz. The films showed a capacitance density of 200 nF/cm 2, a temperature coefficient of capacitance of 296 ppm/°C at 75 kHz, and a breakdown voltage of 42.5 V. This film therefore satisfies the requirements of the International Technology Roadmap for Semiconductors for 2016 for capacitors grown on organic substrates. In addition, the leakage current mechanism of the amorphous BT4 films was found to be Schottky emission, and the Schottky barrier height was calculated as 2.26 eV.

Original languageEnglish (US)
Pages (from-to)1248-1252
Number of pages5
JournalJournal of the American Ceramic Society
Volume96
Issue number4
DOIs
StatePublished - Apr 1 2013

Fingerprint

electrical property
Amorphous films
Magnetron sputtering
Electric properties
substrate
Capacitors
Capacitance
Substrates
Polychlorinated Biphenyls
Polychlorinated biphenyls
Electric breakdown
Leakage currents
Temperature
Permittivity
Semiconductor materials
Electrodes
leakage
dissipation
PCB
electrode

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Kim, Jin Seong ; Kang, Min Gyu ; Kweon, Sang Hyo ; Han, Guifang ; Kang, Chong Yun ; Yun, Jung Rak ; Jeong, Young Hun ; Paik, Jong Hoo ; Nahm, Sahn. / Electrical properties of amorphous BaTi4 O9 films grown on Cu / Ti / SiO2/ Si substrates using RF magnetron sputtering. In: Journal of the American Ceramic Society. 2013 ; Vol. 96, No. 4. pp. 1248-1252.
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abstract = "Amorphous BaTi4O9 (BT4) films for use as capacitors embedded in PCB substrates were grown on Cu electrodes at low temperatures (≤ 200°C). The dielectric constant (k) of the amorphous BT4 film grown at room temperature (RT) was 38, and its dissipation factor was 3.2{\%} at 100 kHz. A similar k value was obtained at radio-frequency ranges, with a quality factor of 143 at 1.0 GHz. The films showed a capacitance density of 200 nF/cm 2, a temperature coefficient of capacitance of 296 ppm/°C at 75 kHz, and a breakdown voltage of 42.5 V. This film therefore satisfies the requirements of the International Technology Roadmap for Semiconductors for 2016 for capacitors grown on organic substrates. In addition, the leakage current mechanism of the amorphous BT4 films was found to be Schottky emission, and the Schottky barrier height was calculated as 2.26 eV.",
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Kim, JS, Kang, MG, Kweon, SH, Han, G, Kang, CY, Yun, JR, Jeong, YH, Paik, JH & Nahm, S 2013, 'Electrical properties of amorphous BaTi4 O9 films grown on Cu / Ti / SiO2/ Si substrates using RF magnetron sputtering', Journal of the American Ceramic Society, vol. 96, no. 4, pp. 1248-1252. https://doi.org/10.1111/jace.12201

Electrical properties of amorphous BaTi4 O9 films grown on Cu / Ti / SiO2/ Si substrates using RF magnetron sputtering. / Kim, Jin Seong; Kang, Min Gyu; Kweon, Sang Hyo; Han, Guifang; Kang, Chong Yun; Yun, Jung Rak; Jeong, Young Hun; Paik, Jong Hoo; Nahm, Sahn.

In: Journal of the American Ceramic Society, Vol. 96, No. 4, 01.04.2013, p. 1248-1252.

Research output: Contribution to journalArticle

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AU - Kim, Jin Seong

AU - Kang, Min Gyu

AU - Kweon, Sang Hyo

AU - Han, Guifang

AU - Kang, Chong Yun

AU - Yun, Jung Rak

AU - Jeong, Young Hun

AU - Paik, Jong Hoo

AU - Nahm, Sahn

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N2 - Amorphous BaTi4O9 (BT4) films for use as capacitors embedded in PCB substrates were grown on Cu electrodes at low temperatures (≤ 200°C). The dielectric constant (k) of the amorphous BT4 film grown at room temperature (RT) was 38, and its dissipation factor was 3.2% at 100 kHz. A similar k value was obtained at radio-frequency ranges, with a quality factor of 143 at 1.0 GHz. The films showed a capacitance density of 200 nF/cm 2, a temperature coefficient of capacitance of 296 ppm/°C at 75 kHz, and a breakdown voltage of 42.5 V. This film therefore satisfies the requirements of the International Technology Roadmap for Semiconductors for 2016 for capacitors grown on organic substrates. In addition, the leakage current mechanism of the amorphous BT4 films was found to be Schottky emission, and the Schottky barrier height was calculated as 2.26 eV.

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