Electrical properties of back-gated n-layer graphene films

P. Joshi, A. Gupta, P. C. Eklund, Srinivas A. Tadigadapa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present results of room temperature studies of the electrical characteristics of back-gated ultrathin graphite films prepared by mechanical transfer of thin sections of Highly Oriented Pyrolytic Graphite (HOPG) to a Si/SiO2 substrate. The films studied were quite thin, exhibiting only a few graphene layers (n). Films with thickness in the range 1 < n < 20 were studied, where n has been deduced by Atomic Force Microscopy (AFM) z-scans. The n value deduced by AFM z-scan data was correlated with the n value deduced by Raman scattering data. We discuss at some length, the issue of whether or not Raman scattering can provide a standalone measure of n. Electrical contacts were made to a few of the low n (n = 1,2,3) graphene films. Most graphene films exhibited a nearly symmetric resistance (R) anomaly vs. gate voltage (V G) in the range 25 < VG < 110 V; some films exhibited as much azs a factor of ∼50 decrease in R (relative to the maximum R) with changing VG. An interesting low bias shoulder on the negative side of the resistance peak anomaly was also observed. The devices were fabricated with a lithography free process.

Original languageEnglish (US)
Title of host publicationMEMS/MOEMS Components and Their Applications IV
Volume6464
DOIs
StatePublished - May 22 2007
EventMEMS/MOEMS Components and Their Applications IV - San Jose, CA, United States
Duration: Jan 22 2007Jan 23 2007

Other

OtherMEMS/MOEMS Components and Their Applications IV
CountryUnited States
CitySan Jose, CA
Period1/22/071/23/07

Fingerprint

Graphene
graphene
Electric properties
electrical properties
Raman scattering
Atomic force microscopy
Graphite
atomic force microscopy
Raman spectra
anomalies
pyrolytic graphite
shoulders
Lithography
electric contacts
lithography
graphite
Electric potential
electric potential
room temperature
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Joshi, P., Gupta, A., Eklund, P. C., & Tadigadapa, S. A. (2007). Electrical properties of back-gated n-layer graphene films. In MEMS/MOEMS Components and Their Applications IV (Vol. 6464). [646409] https://doi.org/10.1117/12.707654
Joshi, P. ; Gupta, A. ; Eklund, P. C. ; Tadigadapa, Srinivas A. / Electrical properties of back-gated n-layer graphene films. MEMS/MOEMS Components and Their Applications IV. Vol. 6464 2007.
@inproceedings{b400be0f3d174f808eff26d518f71c26,
title = "Electrical properties of back-gated n-layer graphene films",
abstract = "We present results of room temperature studies of the electrical characteristics of back-gated ultrathin graphite films prepared by mechanical transfer of thin sections of Highly Oriented Pyrolytic Graphite (HOPG) to a Si/SiO2 substrate. The films studied were quite thin, exhibiting only a few graphene layers (n). Films with thickness in the range 1 < n < 20 were studied, where n has been deduced by Atomic Force Microscopy (AFM) z-scans. The n value deduced by AFM z-scan data was correlated with the n value deduced by Raman scattering data. We discuss at some length, the issue of whether or not Raman scattering can provide a standalone measure of n. Electrical contacts were made to a few of the low n (n = 1,2,3) graphene films. Most graphene films exhibited a nearly symmetric resistance (R) anomaly vs. gate voltage (V G) in the range 25 < VG < 110 V; some films exhibited as much azs a factor of ∼50 decrease in R (relative to the maximum R) with changing VG. An interesting low bias shoulder on the negative side of the resistance peak anomaly was also observed. The devices were fabricated with a lithography free process.",
author = "P. Joshi and A. Gupta and Eklund, {P. C.} and Tadigadapa, {Srinivas A.}",
year = "2007",
month = "5",
day = "22",
doi = "10.1117/12.707654",
language = "English (US)",
isbn = "0819465771",
volume = "6464",
booktitle = "MEMS/MOEMS Components and Their Applications IV",

}

Joshi, P, Gupta, A, Eklund, PC & Tadigadapa, SA 2007, Electrical properties of back-gated n-layer graphene films. in MEMS/MOEMS Components and Their Applications IV. vol. 6464, 646409, MEMS/MOEMS Components and Their Applications IV, San Jose, CA, United States, 1/22/07. https://doi.org/10.1117/12.707654

Electrical properties of back-gated n-layer graphene films. / Joshi, P.; Gupta, A.; Eklund, P. C.; Tadigadapa, Srinivas A.

MEMS/MOEMS Components and Their Applications IV. Vol. 6464 2007. 646409.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Electrical properties of back-gated n-layer graphene films

AU - Joshi, P.

AU - Gupta, A.

AU - Eklund, P. C.

AU - Tadigadapa, Srinivas A.

PY - 2007/5/22

Y1 - 2007/5/22

N2 - We present results of room temperature studies of the electrical characteristics of back-gated ultrathin graphite films prepared by mechanical transfer of thin sections of Highly Oriented Pyrolytic Graphite (HOPG) to a Si/SiO2 substrate. The films studied were quite thin, exhibiting only a few graphene layers (n). Films with thickness in the range 1 < n < 20 were studied, where n has been deduced by Atomic Force Microscopy (AFM) z-scans. The n value deduced by AFM z-scan data was correlated with the n value deduced by Raman scattering data. We discuss at some length, the issue of whether or not Raman scattering can provide a standalone measure of n. Electrical contacts were made to a few of the low n (n = 1,2,3) graphene films. Most graphene films exhibited a nearly symmetric resistance (R) anomaly vs. gate voltage (V G) in the range 25 < VG < 110 V; some films exhibited as much azs a factor of ∼50 decrease in R (relative to the maximum R) with changing VG. An interesting low bias shoulder on the negative side of the resistance peak anomaly was also observed. The devices were fabricated with a lithography free process.

AB - We present results of room temperature studies of the electrical characteristics of back-gated ultrathin graphite films prepared by mechanical transfer of thin sections of Highly Oriented Pyrolytic Graphite (HOPG) to a Si/SiO2 substrate. The films studied were quite thin, exhibiting only a few graphene layers (n). Films with thickness in the range 1 < n < 20 were studied, where n has been deduced by Atomic Force Microscopy (AFM) z-scans. The n value deduced by AFM z-scan data was correlated with the n value deduced by Raman scattering data. We discuss at some length, the issue of whether or not Raman scattering can provide a standalone measure of n. Electrical contacts were made to a few of the low n (n = 1,2,3) graphene films. Most graphene films exhibited a nearly symmetric resistance (R) anomaly vs. gate voltage (V G) in the range 25 < VG < 110 V; some films exhibited as much azs a factor of ∼50 decrease in R (relative to the maximum R) with changing VG. An interesting low bias shoulder on the negative side of the resistance peak anomaly was also observed. The devices were fabricated with a lithography free process.

UR - http://www.scopus.com/inward/record.url?scp=34248598346&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248598346&partnerID=8YFLogxK

U2 - 10.1117/12.707654

DO - 10.1117/12.707654

M3 - Conference contribution

AN - SCOPUS:34248598346

SN - 0819465771

SN - 9780819465771

VL - 6464

BT - MEMS/MOEMS Components and Their Applications IV

ER -

Joshi P, Gupta A, Eklund PC, Tadigadapa SA. Electrical properties of back-gated n-layer graphene films. In MEMS/MOEMS Components and Their Applications IV. Vol. 6464. 2007. 646409 https://doi.org/10.1117/12.707654