Electrical properties of back-gated n-layer graphene films

P. Joshi, A. Gupta, P. C. Eklund, Srinivas A. Tadigadapa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present results of room temperature studies of the electrical characteristics of back-gated ultrathin graphite films prepared by mechanical transfer of thin sections of Highly Oriented Pyrolytic Graphite (HOPG) to a Si/SiO2 substrate. The films studied were quite thin, exhibiting only a few graphene layers (n). Films with thickness in the range 1 < n < 20 were studied, where n has been deduced by Atomic Force Microscopy (AFM) z-scans. The n value deduced by AFM z-scan data was correlated with the n value deduced by Raman scattering data. We discuss at some length, the issue of whether or not Raman scattering can provide a standalone measure of n. Electrical contacts were made to a few of the low n (n = 1,2,3) graphene films. Most graphene films exhibited a nearly symmetric resistance (R) anomaly vs. gate voltage (V G) in the range 25 < VG < 110 V; some films exhibited as much azs a factor of ∼50 decrease in R (relative to the maximum R) with changing VG. An interesting low bias shoulder on the negative side of the resistance peak anomaly was also observed. The devices were fabricated with a lithography free process.

Original languageEnglish (US)
Title of host publicationMEMS/MOEMS Components and Their Applications IV
Volume6464
DOIs
StatePublished - May 22 2007
EventMEMS/MOEMS Components and Their Applications IV - San Jose, CA, United States
Duration: Jan 22 2007Jan 23 2007

Other

OtherMEMS/MOEMS Components and Their Applications IV
CountryUnited States
CitySan Jose, CA
Period1/22/071/23/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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