Electrical properties of contact etched p-Si

A comparison between magnetically enhanced and conventional reactive ion etching

Osama O. Awadelkarim, P. I. Mikulan, T. Gu, K. A. Reinhardt, Y. D. Chan

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We report the results of a comparative study of the damage induced in boron-doped Si by contact etching. The two approaches compared are conventional reactive ion etching and magnetically enhanced reactive ion etching (MERIE). The two structure-chemistry combinations used are SiO2/Si with CHF 3/O2 plasmas, and bare Si wafers with CHF3/Ar plasmas. The damage examined in the Si substrates of both structures is that of electronic states in the band gap, the permeation into Si of hydrogen, and the deactivation of boron acceptors. These types of damage are explored by means of deep level transient spectroscopy and capacitance-voltage measurements on Ti/Si Schottky diodes fabricated on the etched substrate surfaces. The gap states induced by these contact etches are ascribed to interstitial-atom-related defects which are proposed to be formed as a result of interactions involving self interstitials. During etching these defects are observed to be both generated by the etching process itself as well as electrically passivated by permeating hydrogen. The hydrogen permeation of the substrate, monitored via acceptor deactivation, is seen to be enhanced for MERIE with increasing magnetic field intensities.

Original languageEnglish (US)
Pages (from-to)2270-2278
Number of pages9
JournalJournal of Applied Physics
Volume76
Issue number4
DOIs
StatePublished - Dec 1 1994

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electrical properties
etching
ions
damage
deactivation
interstitials
boron
hydrogen
permeating
defects
Schottky diodes
electrical measurement
magnetic flux
capacitance
wafers
chemistry
electronics
spectroscopy
atoms
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{b8be56bcaeaa44f6988440043c28513e,
title = "Electrical properties of contact etched p-Si: A comparison between magnetically enhanced and conventional reactive ion etching",
abstract = "We report the results of a comparative study of the damage induced in boron-doped Si by contact etching. The two approaches compared are conventional reactive ion etching and magnetically enhanced reactive ion etching (MERIE). The two structure-chemistry combinations used are SiO2/Si with CHF 3/O2 plasmas, and bare Si wafers with CHF3/Ar plasmas. The damage examined in the Si substrates of both structures is that of electronic states in the band gap, the permeation into Si of hydrogen, and the deactivation of boron acceptors. These types of damage are explored by means of deep level transient spectroscopy and capacitance-voltage measurements on Ti/Si Schottky diodes fabricated on the etched substrate surfaces. The gap states induced by these contact etches are ascribed to interstitial-atom-related defects which are proposed to be formed as a result of interactions involving self interstitials. During etching these defects are observed to be both generated by the etching process itself as well as electrically passivated by permeating hydrogen. The hydrogen permeation of the substrate, monitored via acceptor deactivation, is seen to be enhanced for MERIE with increasing magnetic field intensities.",
author = "Awadelkarim, {Osama O.} and Mikulan, {P. I.} and T. Gu and Reinhardt, {K. A.} and Chan, {Y. D.}",
year = "1994",
month = "12",
day = "1",
doi = "10.1063/1.357647",
language = "English (US)",
volume = "76",
pages = "2270--2278",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

Electrical properties of contact etched p-Si : A comparison between magnetically enhanced and conventional reactive ion etching. / Awadelkarim, Osama O.; Mikulan, P. I.; Gu, T.; Reinhardt, K. A.; Chan, Y. D.

In: Journal of Applied Physics, Vol. 76, No. 4, 01.12.1994, p. 2270-2278.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical properties of contact etched p-Si

T2 - A comparison between magnetically enhanced and conventional reactive ion etching

AU - Awadelkarim, Osama O.

AU - Mikulan, P. I.

AU - Gu, T.

AU - Reinhardt, K. A.

AU - Chan, Y. D.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We report the results of a comparative study of the damage induced in boron-doped Si by contact etching. The two approaches compared are conventional reactive ion etching and magnetically enhanced reactive ion etching (MERIE). The two structure-chemistry combinations used are SiO2/Si with CHF 3/O2 plasmas, and bare Si wafers with CHF3/Ar plasmas. The damage examined in the Si substrates of both structures is that of electronic states in the band gap, the permeation into Si of hydrogen, and the deactivation of boron acceptors. These types of damage are explored by means of deep level transient spectroscopy and capacitance-voltage measurements on Ti/Si Schottky diodes fabricated on the etched substrate surfaces. The gap states induced by these contact etches are ascribed to interstitial-atom-related defects which are proposed to be formed as a result of interactions involving self interstitials. During etching these defects are observed to be both generated by the etching process itself as well as electrically passivated by permeating hydrogen. The hydrogen permeation of the substrate, monitored via acceptor deactivation, is seen to be enhanced for MERIE with increasing magnetic field intensities.

AB - We report the results of a comparative study of the damage induced in boron-doped Si by contact etching. The two approaches compared are conventional reactive ion etching and magnetically enhanced reactive ion etching (MERIE). The two structure-chemistry combinations used are SiO2/Si with CHF 3/O2 plasmas, and bare Si wafers with CHF3/Ar plasmas. The damage examined in the Si substrates of both structures is that of electronic states in the band gap, the permeation into Si of hydrogen, and the deactivation of boron acceptors. These types of damage are explored by means of deep level transient spectroscopy and capacitance-voltage measurements on Ti/Si Schottky diodes fabricated on the etched substrate surfaces. The gap states induced by these contact etches are ascribed to interstitial-atom-related defects which are proposed to be formed as a result of interactions involving self interstitials. During etching these defects are observed to be both generated by the etching process itself as well as electrically passivated by permeating hydrogen. The hydrogen permeation of the substrate, monitored via acceptor deactivation, is seen to be enhanced for MERIE with increasing magnetic field intensities.

UR - http://www.scopus.com/inward/record.url?scp=0001701930&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001701930&partnerID=8YFLogxK

U2 - 10.1063/1.357647

DO - 10.1063/1.357647

M3 - Article

VL - 76

SP - 2270

EP - 2278

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

ER -