Electrical properties of lead zirconate titanate thin films with a ZrO 2 buffer layer on an electroless Ni-coated Cu foil

Taeyun Kim, Angus I. Kingon, Jon Paul Maria, Robert T. Croswell

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effect of zirconia (ZrO 2) buffer layers on the phase development and electrical properties of lead zirconate titanate (PZT, 52/48) capacitors on an electroless Ni (P)-coated Cu foil was investigated. It was demonstrated that the buffer layer can be used to engineer the final properties. The incorporation of the ZrO 2 buffer layers retained acceptable capacitance densities (>350 nF/cm 2 for 50 nm thick ZrO 2), while significantly reducing leakage currents and improving reliability (<10 -7 A/cm 2 after 1 h at 25 VDC for 100 nm thick ZrO 2), compared with PZT thin films directly on electroless Ni (P). The results are particularly important for embedded capacitor applications.

Original languageEnglish (US)
Pages (from-to)3426-3430
Number of pages5
JournalJournal of the American Ceramic Society
Volume89
Issue number11
DOIs
StatePublished - Nov 1 2006

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Buffer layers
Metal foil
Electric properties
Thin films
Capacitors
Leakage currents
Zirconia
Capacitance
Engineers
lead titanate zirconate

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Cite this

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abstract = "The effect of zirconia (ZrO 2) buffer layers on the phase development and electrical properties of lead zirconate titanate (PZT, 52/48) capacitors on an electroless Ni (P)-coated Cu foil was investigated. It was demonstrated that the buffer layer can be used to engineer the final properties. The incorporation of the ZrO 2 buffer layers retained acceptable capacitance densities (>350 nF/cm 2 for 50 nm thick ZrO 2), while significantly reducing leakage currents and improving reliability (<10 -7 A/cm 2 after 1 h at 25 VDC for 100 nm thick ZrO 2), compared with PZT thin films directly on electroless Ni (P). The results are particularly important for embedded capacitor applications.",
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Electrical properties of lead zirconate titanate thin films with a ZrO 2 buffer layer on an electroless Ni-coated Cu foil. / Kim, Taeyun; Kingon, Angus I.; Maria, Jon Paul; Croswell, Robert T.

In: Journal of the American Ceramic Society, Vol. 89, No. 11, 01.11.2006, p. 3426-3430.

Research output: Contribution to journalArticle

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AU - Croswell, Robert T.

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AB - The effect of zirconia (ZrO 2) buffer layers on the phase development and electrical properties of lead zirconate titanate (PZT, 52/48) capacitors on an electroless Ni (P)-coated Cu foil was investigated. It was demonstrated that the buffer layer can be used to engineer the final properties. The incorporation of the ZrO 2 buffer layers retained acceptable capacitance densities (>350 nF/cm 2 for 50 nm thick ZrO 2), while significantly reducing leakage currents and improving reliability (<10 -7 A/cm 2 after 1 h at 25 VDC for 100 nm thick ZrO 2), compared with PZT thin films directly on electroless Ni (P). The results are particularly important for embedded capacitor applications.

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