Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

David F. Brown, Rongming Chu, Stacia Keller, Steven P. Denbaars, Umesh K. Mishra

Research output: Contribution to journalArticle

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Abstract

N-polar high electron mobility transistors (HEMTs) were fabricated from GaN/AlGaN/GaN heterostructures grown on n -type vicinal C-face SiC substrates by metalorganic chemical vapor deposition. The heterostructures had a sheet charge density and mobility of 6.6× 1012 cm-2 and 1370 cm2 V-1 s-1, respectively. HEMTs with a gate length of 0.7 μm had a peak transconductance of 135 mS/mm, a peak drain current of 0.65 A/mm, and a three-terminal breakdown voltage greater than 150 V. At a drain bias of 20 V, the current-gain and power-gain cutoff frequencies with the pad capacitances de-embedded were 17 and 33 GHz, respectively.

Original languageEnglish (US)
Article number153506
JournalApplied Physics Letters
Volume94
Issue number15
DOIs
StatePublished - Apr 27 2009

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high electron mobility transistors
metalorganic chemical vapor deposition
electrical properties
power gain
transconductance
electrical faults
cut-off
capacitance

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition",
abstract = "N-polar high electron mobility transistors (HEMTs) were fabricated from GaN/AlGaN/GaN heterostructures grown on n -type vicinal C-face SiC substrates by metalorganic chemical vapor deposition. The heterostructures had a sheet charge density and mobility of 6.6× 1012 cm-2 and 1370 cm2 V-1 s-1, respectively. HEMTs with a gate length of 0.7 μm had a peak transconductance of 135 mS/mm, a peak drain current of 0.65 A/mm, and a three-terminal breakdown voltage greater than 150 V. At a drain bias of 20 V, the current-gain and power-gain cutoff frequencies with the pad capacitances de-embedded were 17 and 33 GHz, respectively.",
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Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition. / Brown, David F.; Chu, Rongming; Keller, Stacia; Denbaars, Steven P.; Mishra, Umesh K.

In: Applied Physics Letters, Vol. 94, No. 15, 153506, 27.04.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

AU - Brown, David F.

AU - Chu, Rongming

AU - Keller, Stacia

AU - Denbaars, Steven P.

AU - Mishra, Umesh K.

PY - 2009/4/27

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AB - N-polar high electron mobility transistors (HEMTs) were fabricated from GaN/AlGaN/GaN heterostructures grown on n -type vicinal C-face SiC substrates by metalorganic chemical vapor deposition. The heterostructures had a sheet charge density and mobility of 6.6× 1012 cm-2 and 1370 cm2 V-1 s-1, respectively. HEMTs with a gate length of 0.7 μm had a peak transconductance of 135 mS/mm, a peak drain current of 0.65 A/mm, and a three-terminal breakdown voltage greater than 150 V. At a drain bias of 20 V, the current-gain and power-gain cutoff frequencies with the pad capacitances de-embedded were 17 and 33 GHz, respectively.

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