Electrical properties of plasma enhanced chemical vapor deposition a-Si:H and a-Si1-xCx:H for microbolometer applications

Hang Beum Shin, David Saint John, Myung Yoon Lee, Nikolas J. Podraza, Thomas Nelson Jackson

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Electrical properties for resistive microbolometer sensor materials including resistivity, temperature coefficient of resistance (TCR), and normalized Hooge parameter were explored in n-type a-Si:H and a-Si 1-xCx:H prepared by plasma enhanced chemical vapor deposition. The complex dielectric function spectra (ε = ε1 + iε2) and structure were measured by spectroscopic ellipsometry. Two-dimensional drift-diffusion simulations were used to understand the band-tail slope dependency of TCR and 1/f noise.

Original languageEnglish (US)
Article number183705
JournalJournal of Applied Physics
Volume114
Issue number18
DOIs
StatePublished - Nov 14 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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