Electrical signature of ion-implantation induced defects in n-silicon in the defect cluster regime studied using DLTS and isothermal transient spectroscopies

Samarendra P. Singh, Vineet Rao, Y. N. Mohapatra, Sanjay Rangan, S. Ashok

Research output: Contribution to journalArticle

Abstract

We study electrical signature of defect clusters in KeV Ar ion-implanted n-silicon using Deep Level Transient Spectroscopy (DLTS) and isothermal capacitance spectroscopies such as time analyzed transient spectroscopy (TATS) and high resolution Laplace-DLTS. The samples are annealed at relatively low temperatures of 350 °C - 600 °C at which defect clusters are known to form and evolve. Contrary to the view that few dominant point-defect like traps are associated with defect clusters, our results show that the band gap may be replete with bands of multiple trap states; however their occupation and hence observation depends on experimental conditions dictated by dynamics of career capture and emission at these traps. Charge redistribution among multiple states and deepening of effective emission energy with capture are shown to be commonly occurring at these defects. Isothermal transient spectroscopy is shown to be appropriate tool for recognition of some of these features.

Original languageEnglish (US)
Pages (from-to)303-309
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
Volume719
StatePublished - 2002

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Deep level transient spectroscopy
Silicon
Ion implantation
ion implantation
signatures
Spectroscopy
Defects
defects
silicon
spectroscopy
traps
Point defects
Energy gap
Capacitance
occupation
point defects
Ions
capacitance
high resolution
ions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

@article{d99ca07bc345484ebe98bc0ddd12a5ff,
title = "Electrical signature of ion-implantation induced defects in n-silicon in the defect cluster regime studied using DLTS and isothermal transient spectroscopies",
abstract = "We study electrical signature of defect clusters in KeV Ar ion-implanted n-silicon using Deep Level Transient Spectroscopy (DLTS) and isothermal capacitance spectroscopies such as time analyzed transient spectroscopy (TATS) and high resolution Laplace-DLTS. The samples are annealed at relatively low temperatures of 350 °C - 600 °C at which defect clusters are known to form and evolve. Contrary to the view that few dominant point-defect like traps are associated with defect clusters, our results show that the band gap may be replete with bands of multiple trap states; however their occupation and hence observation depends on experimental conditions dictated by dynamics of career capture and emission at these traps. Charge redistribution among multiple states and deepening of effective emission energy with capture are shown to be commonly occurring at these defects. Isothermal transient spectroscopy is shown to be appropriate tool for recognition of some of these features.",
author = "Singh, {Samarendra P.} and Vineet Rao and Mohapatra, {Y. N.} and Sanjay Rangan and S. Ashok",
year = "2002",
language = "English (US)",
volume = "719",
pages = "303--309",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Electrical signature of ion-implantation induced defects in n-silicon in the defect cluster regime studied using DLTS and isothermal transient spectroscopies. / Singh, Samarendra P.; Rao, Vineet; Mohapatra, Y. N.; Rangan, Sanjay; Ashok, S.

In: Materials Research Society Symposium - Proceedings, Vol. 719, 2002, p. 303-309.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical signature of ion-implantation induced defects in n-silicon in the defect cluster regime studied using DLTS and isothermal transient spectroscopies

AU - Singh, Samarendra P.

AU - Rao, Vineet

AU - Mohapatra, Y. N.

AU - Rangan, Sanjay

AU - Ashok, S.

PY - 2002

Y1 - 2002

N2 - We study electrical signature of defect clusters in KeV Ar ion-implanted n-silicon using Deep Level Transient Spectroscopy (DLTS) and isothermal capacitance spectroscopies such as time analyzed transient spectroscopy (TATS) and high resolution Laplace-DLTS. The samples are annealed at relatively low temperatures of 350 °C - 600 °C at which defect clusters are known to form and evolve. Contrary to the view that few dominant point-defect like traps are associated with defect clusters, our results show that the band gap may be replete with bands of multiple trap states; however their occupation and hence observation depends on experimental conditions dictated by dynamics of career capture and emission at these traps. Charge redistribution among multiple states and deepening of effective emission energy with capture are shown to be commonly occurring at these defects. Isothermal transient spectroscopy is shown to be appropriate tool for recognition of some of these features.

AB - We study electrical signature of defect clusters in KeV Ar ion-implanted n-silicon using Deep Level Transient Spectroscopy (DLTS) and isothermal capacitance spectroscopies such as time analyzed transient spectroscopy (TATS) and high resolution Laplace-DLTS. The samples are annealed at relatively low temperatures of 350 °C - 600 °C at which defect clusters are known to form and evolve. Contrary to the view that few dominant point-defect like traps are associated with defect clusters, our results show that the band gap may be replete with bands of multiple trap states; however their occupation and hence observation depends on experimental conditions dictated by dynamics of career capture and emission at these traps. Charge redistribution among multiple states and deepening of effective emission energy with capture are shown to be commonly occurring at these defects. Isothermal transient spectroscopy is shown to be appropriate tool for recognition of some of these features.

UR - http://www.scopus.com/inward/record.url?scp=0036451805&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036451805&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0036451805

VL - 719

SP - 303

EP - 309

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -