We have evaluated the long-term electrical reliability of GaN/AlGaN high-electron-mobility transistors grown under Ga-rich, N-rich, and NH 3 -rich conditions. V pinch-off shifts positively after stress for devices grown under Ga-rich and N-rich conditions, while it shifts negatively for NH 3 -rich devices. Density functional theory calculations suggest that the hot-electron-induced release of hydrogen from hydrogenated Ga-vacancies is primarily responsible for the degradation of devices grown in Ga-rich and N-rich conditions, while hydrogenated N-antisites are the dominant defects causing degradation in devices grown under NH 3 -rich conditions.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)