Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions

T. Roy, Y. S. Puzyrev, Blair Richard Tuttle, D. M. Fleetwood, R. D. Schrimpf, D. F. Brown, U. K. Mishra, S. T. Pantelides

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37 Scopus citations

Abstract

We have evaluated the long-term electrical reliability of GaN/AlGaN high-electron-mobility transistors grown under Ga-rich, N-rich, and NH 3 -rich conditions. V pinch-off shifts positively after stress for devices grown under Ga-rich and N-rich conditions, while it shifts negatively for NH 3 -rich devices. Density functional theory calculations suggest that the hot-electron-induced release of hydrogen from hydrogenated Ga-vacancies is primarily responsible for the degradation of devices grown in Ga-rich and N-rich conditions, while hydrogenated N-antisites are the dominant defects causing degradation in devices grown under NH 3 -rich conditions.

Original languageEnglish (US)
Article number133503
JournalApplied Physics Letters
Volume96
Issue number13
DOIs
StatePublished - Apr 12 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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