Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching

Ranbir Singh, S. J. Fonash, S. Ashok, P. J. Caplan, J. Shappirio, M. Hage-Ali, J. Ponpon

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

A study to elucidate the role of processing-induced changes in Si, subjected to ion-beam etching has been made. It is shown that these changes can be related to the primary ion beam used in ion-beam etching. Using ESR, trivalently bonded Si has been shown to be present. Fe and Cr have been found to be the main contaminants. An annealing study revealed that the damage can be annealed out at relatively high temperatures.

Original languageEnglish (US)
Pages (from-to)334-336
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume1
Issue number2
DOIs
StatePublished - Jan 1 1983

Fingerprint

Silicon
Ion beams
Etching
ion beams
etching
silicon
contaminants
Paramagnetic resonance
Annealing
Impurities
damage
annealing
Processing
Temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Singh, Ranbir ; Fonash, S. J. ; Ashok, S. ; Caplan, P. J. ; Shappirio, J. ; Hage-Ali, M. ; Ponpon, J. / Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1983 ; Vol. 1, No. 2. pp. 334-336.
@article{25908bcb292f4784a448698b1ddd5ea6,
title = "Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching",
abstract = "A study to elucidate the role of processing-induced changes in Si, subjected to ion-beam etching has been made. It is shown that these changes can be related to the primary ion beam used in ion-beam etching. Using ESR, trivalently bonded Si has been shown to be present. Fe and Cr have been found to be the main contaminants. An annealing study revealed that the damage can be annealed out at relatively high temperatures.",
author = "Ranbir Singh and Fonash, {S. J.} and S. Ashok and Caplan, {P. J.} and J. Shappirio and M. Hage-Ali and J. Ponpon",
year = "1983",
month = "1",
day = "1",
doi = "10.1116/1.572127",
language = "English (US)",
volume = "1",
pages = "334--336",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "2",

}

Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching. / Singh, Ranbir; Fonash, S. J.; Ashok, S.; Caplan, P. J.; Shappirio, J.; Hage-Ali, M.; Ponpon, J.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 1, No. 2, 01.01.1983, p. 334-336.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching

AU - Singh, Ranbir

AU - Fonash, S. J.

AU - Ashok, S.

AU - Caplan, P. J.

AU - Shappirio, J.

AU - Hage-Ali, M.

AU - Ponpon, J.

PY - 1983/1/1

Y1 - 1983/1/1

N2 - A study to elucidate the role of processing-induced changes in Si, subjected to ion-beam etching has been made. It is shown that these changes can be related to the primary ion beam used in ion-beam etching. Using ESR, trivalently bonded Si has been shown to be present. Fe and Cr have been found to be the main contaminants. An annealing study revealed that the damage can be annealed out at relatively high temperatures.

AB - A study to elucidate the role of processing-induced changes in Si, subjected to ion-beam etching has been made. It is shown that these changes can be related to the primary ion beam used in ion-beam etching. Using ESR, trivalently bonded Si has been shown to be present. Fe and Cr have been found to be the main contaminants. An annealing study revealed that the damage can be annealed out at relatively high temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0020114941&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020114941&partnerID=8YFLogxK

U2 - 10.1116/1.572127

DO - 10.1116/1.572127

M3 - Article

VL - 1

SP - 334

EP - 336

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 2

ER -