Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching

Ranbir Singh, S. J. Fonash, S. Ashok, P. J. Caplan, J. Shappirio, M. Hage-Ali, J. Ponpon

Research output: Contribution to journalArticle

46 Scopus citations

Abstract

A study to elucidate the role of processing-induced changes in Si, subjected to ion-beam etching has been made. It is shown that these changes can be related to the primary ion beam used in ion-beam etching. Using ESR, trivalently bonded Si has been shown to be present. Fe and Cr have been found to be the main contaminants. An annealing study revealed that the damage can be annealed out at relatively high temperatures.

Original languageEnglish (US)
Pages (from-to)334-336
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume1
Issue number2
DOIs
StatePublished - Apr 1983

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this