Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems

Osama O. Awadelkarim, J. Jiang, Samia A. Suliman, K. Sarpatwari, Lucas Jay Passmore, D. O. Lee, P. Roman, Jerzy Ruzyllo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The accumulation capacitance of metal-insulator-Si (MIS) capacitors with SrTa2O6 or TiO2 high-k gate dielectrics is observed to have significantly different dependence on the temperature and the frequency of a capacitance-voltage measurement than that of the conventional metal-oxide-Si (MOS) capacitors. It is shown that this is due to contributions from the, often, inadvertently grown, and relatively poorer quality interfacial dielectric between the high-k material stack and the Si substrate. Although it is generally accepted that NH3 or NO nitridation of pre-high k-deposition Si surface is able to suppress the thickness of the dielectric layer, we found out that it does not necessarily improve the effective oxide thickness value, reduce the leakage current density and the interface state density, or protect the silicon substrate from the deposition related electrically active bulk Si deep traps.

Original languageEnglish (US)
Title of host publicationECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007
Pages353-362
Number of pages10
Edition1
DOIs
StatePublished - Dec 1 2007
Event22nd Symposium on Microelectronics Technology and Devices, SBMicro2007 - Rio de Janeiro, Brazil
Duration: Sep 3 2007Sep 6 2007

Publication series

NameECS Transactions
Number1
Volume9
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other22nd Symposium on Microelectronics Technology and Devices, SBMicro2007
CountryBrazil
CityRio de Janeiro
Period9/3/079/6/07

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Capacitors
Oxides
Nitridation
Capacitance measurement
Interface states
Gate dielectrics
Voltage measurement
Substrates
Metals
Leakage currents
Current density
Capacitance
Silicon
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Awadelkarim, O. O., Jiang, J., Suliman, S. A., Sarpatwari, K., Passmore, L. J., Lee, D. O., ... Ruzyllo, J. (2007). Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems. In ECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007 (1 ed., pp. 353-362). (ECS Transactions; Vol. 9, No. 1). https://doi.org/10.1149/1.2766906
Awadelkarim, Osama O. ; Jiang, J. ; Suliman, Samia A. ; Sarpatwari, K. ; Passmore, Lucas Jay ; Lee, D. O. ; Roman, P. ; Ruzyllo, Jerzy. / Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems. ECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007. 1. ed. 2007. pp. 353-362 (ECS Transactions; 1).
@inproceedings{85ad822a04474c8087d521b6cd41db38,
title = "Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems",
abstract = "The accumulation capacitance of metal-insulator-Si (MIS) capacitors with SrTa2O6 or TiO2 high-k gate dielectrics is observed to have significantly different dependence on the temperature and the frequency of a capacitance-voltage measurement than that of the conventional metal-oxide-Si (MOS) capacitors. It is shown that this is due to contributions from the, often, inadvertently grown, and relatively poorer quality interfacial dielectric between the high-k material stack and the Si substrate. Although it is generally accepted that NH3 or NO nitridation of pre-high k-deposition Si surface is able to suppress the thickness of the dielectric layer, we found out that it does not necessarily improve the effective oxide thickness value, reduce the leakage current density and the interface state density, or protect the silicon substrate from the deposition related electrically active bulk Si deep traps.",
author = "Awadelkarim, {Osama O.} and J. Jiang and Suliman, {Samia A.} and K. Sarpatwari and Passmore, {Lucas Jay} and Lee, {D. O.} and P. Roman and Jerzy Ruzyllo",
year = "2007",
month = "12",
day = "1",
doi = "10.1149/1.2766906",
language = "English (US)",
isbn = "9781566775656",
series = "ECS Transactions",
number = "1",
pages = "353--362",
booktitle = "ECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007",
edition = "1",

}

Awadelkarim, OO, Jiang, J, Suliman, SA, Sarpatwari, K, Passmore, LJ, Lee, DO, Roman, P & Ruzyllo, J 2007, Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems. in ECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007. 1 edn, ECS Transactions, no. 1, vol. 9, pp. 353-362, 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007, Rio de Janeiro, Brazil, 9/3/07. https://doi.org/10.1149/1.2766906

Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems. / Awadelkarim, Osama O.; Jiang, J.; Suliman, Samia A.; Sarpatwari, K.; Passmore, Lucas Jay; Lee, D. O.; Roman, P.; Ruzyllo, Jerzy.

ECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007. 1. ed. 2007. p. 353-362 (ECS Transactions; Vol. 9, No. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems

AU - Awadelkarim, Osama O.

AU - Jiang, J.

AU - Suliman, Samia A.

AU - Sarpatwari, K.

AU - Passmore, Lucas Jay

AU - Lee, D. O.

AU - Roman, P.

AU - Ruzyllo, Jerzy

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The accumulation capacitance of metal-insulator-Si (MIS) capacitors with SrTa2O6 or TiO2 high-k gate dielectrics is observed to have significantly different dependence on the temperature and the frequency of a capacitance-voltage measurement than that of the conventional metal-oxide-Si (MOS) capacitors. It is shown that this is due to contributions from the, often, inadvertently grown, and relatively poorer quality interfacial dielectric between the high-k material stack and the Si substrate. Although it is generally accepted that NH3 or NO nitridation of pre-high k-deposition Si surface is able to suppress the thickness of the dielectric layer, we found out that it does not necessarily improve the effective oxide thickness value, reduce the leakage current density and the interface state density, or protect the silicon substrate from the deposition related electrically active bulk Si deep traps.

AB - The accumulation capacitance of metal-insulator-Si (MIS) capacitors with SrTa2O6 or TiO2 high-k gate dielectrics is observed to have significantly different dependence on the temperature and the frequency of a capacitance-voltage measurement than that of the conventional metal-oxide-Si (MOS) capacitors. It is shown that this is due to contributions from the, often, inadvertently grown, and relatively poorer quality interfacial dielectric between the high-k material stack and the Si substrate. Although it is generally accepted that NH3 or NO nitridation of pre-high k-deposition Si surface is able to suppress the thickness of the dielectric layer, we found out that it does not necessarily improve the effective oxide thickness value, reduce the leakage current density and the interface state density, or protect the silicon substrate from the deposition related electrically active bulk Si deep traps.

UR - http://www.scopus.com/inward/record.url?scp=45249083411&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45249083411&partnerID=8YFLogxK

U2 - 10.1149/1.2766906

DO - 10.1149/1.2766906

M3 - Conference contribution

AN - SCOPUS:45249083411

SN - 9781566775656

T3 - ECS Transactions

SP - 353

EP - 362

BT - ECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007

ER -

Awadelkarim OO, Jiang J, Suliman SA, Sarpatwari K, Passmore LJ, Lee DO et al. Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems. In ECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007. 1 ed. 2007. p. 353-362. (ECS Transactions; 1). https://doi.org/10.1149/1.2766906