Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems

O. O. Awadelkarim, J. Jiang, S. A. Suliman, K. Sarpatwari, L. J. Passmore, D. O. Lee, P. Roman, J. R. Ruzyllo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


The accumulation capacitance of metal-insulator-Si (MIS) capacitors with SrTa2O6 or TiO2 high-k gate dielectrics is observed to have significantly different dependence on the temperature and the frequency of a capacitance-voltage measurement than that of the conventional metal-oxide-Si (MOS) capacitors. It is shown that this is due to contributions from the, often, inadvertently grown, and relatively poorer quality interfacial dielectric between the high-k material stack and the Si substrate. Although it is generally accepted that NH3 or NO nitridation of pre-high k-deposition Si surface is able to suppress the thickness of the dielectric layer, we found out that it does not necessarily improve the effective oxide thickness value, reduce the leakage current density and the interface state density, or protect the silicon substrate from the deposition related electrically active bulk Si deep traps.

Original languageEnglish (US)
Title of host publicationECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007
Number of pages10
StatePublished - 2007
Event22nd Symposium on Microelectronics Technology and Devices, SBMicro2007 - Rio de Janeiro, Brazil
Duration: Sep 3 2007Sep 6 2007

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


Other22nd Symposium on Microelectronics Technology and Devices, SBMicro2007
CityRio de Janeiro

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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