Electrical studies on metal/SrTa2O6 or TiO 2/ Si substrate stack systems

O. O. Awadelkarim, J. Jiang, S. A. Suliman, K. Sarpatwari, L. J. Passmore, D. O. Lee, P. Roman, J. R. Ruzyllo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The accumulation capacitance of metal-insulator-Si (MIS) capacitors with SrTa2O6 or TiO2 high-k gate dielectrics is observed to have significantly different dependence on the temperature and the frequency of a capacitance-voltage measurement than that of the conventional metal-oxide-Si (MOS) capacitors. It is shown that this is due to contributions from the, often, inadvertently grown, and relatively poorer quality interfacial dielectric between the high-k material stack and the Si substrate. Although it is generally accepted that NH3 or NO nitridation of pre-high k-deposition Si surface is able to suppress the thickness of the dielectric layer, we found out that it does not necessarily improve the effective oxide thickness value, reduce the leakage current density and the interface state density, or protect the silicon substrate from the deposition related electrically active bulk Si deep traps.

Original languageEnglish (US)
Title of host publicationECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007
Pages353-362
Number of pages10
Edition1
DOIs
StatePublished - Dec 1 2007
Event22nd Symposium on Microelectronics Technology and Devices, SBMicro2007 - Rio de Janeiro, Brazil
Duration: Sep 3 2007Sep 6 2007

Publication series

NameECS Transactions
Number1
Volume9
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other22nd Symposium on Microelectronics Technology and Devices, SBMicro2007
CountryBrazil
CityRio de Janeiro
Period9/3/079/6/07

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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