Electrical transport across oxygen-doped-silicon buried layers by substoichiometric oxygen ion implantation in silicon

K. Srikanth, S. Ashok

Research output: Contribution to journalArticle

Abstract

The electrical and physical property changes of c-Si after substoichiometric oxygen ion implantation have been investigated using I-V, spreading resistance, secondary ion mass spectroscopy, spectroscopic ellipsometry and Fourier transform infrared spectroscopy. A key observation is the presence of donors in the vicinity of the implanted region, resulting in extensive counterdoping of p-type c-Si. Redistribution of the oxygen atoms during the high-temperature anneal results in sharp interfaces aiding the formation of a heterojunction. Mesa-type diodes on the implanted sample exhibit excellent rectification with a diode ideality factor n of 1.2 and a reverse saturation current density of 1×10-8 A/cm2. The near-surface region is shown to be crucial for achieving the high rectification behavior.

Original languageEnglish (US)
Pages (from-to)3188-3190
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number23
DOIs
StatePublished - Dec 1 1993

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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