Electrical transport across oxygen-doped-silicon buried layers by substoichiometric oxygen ion implantation in silicon

K. Srikanth, S. Ashok

Research output: Contribution to journalArticle

Abstract

The electrical and physical property changes of c-Si after substoichiometric oxygen ion implantation have been investigated using I-V, spreading resistance, secondary ion mass spectroscopy, spectroscopic ellipsometry and Fourier transform infrared spectroscopy. A key observation is the presence of donors in the vicinity of the implanted region, resulting in extensive counterdoping of p-type c-Si. Redistribution of the oxygen atoms during the high-temperature anneal results in sharp interfaces aiding the formation of a heterojunction. Mesa-type diodes on the implanted sample exhibit excellent rectification with a diode ideality factor n of 1.2 and a reverse saturation current density of 1×10-8 A/cm2. The near-surface region is shown to be crucial for achieving the high rectification behavior.

Original languageEnglish (US)
Pages (from-to)3188-3190
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number23
DOIs
StatePublished - Dec 1 1993

Fingerprint

rectification
oxygen ions
ion implantation
diodes
mesas
silicon
oxygen
ellipsometry
heterojunctions
oxygen atoms
mass spectroscopy
physical properties
infrared spectroscopy
electrical properties
current density
saturation
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The electrical and physical property changes of c-Si after substoichiometric oxygen ion implantation have been investigated using I-V, spreading resistance, secondary ion mass spectroscopy, spectroscopic ellipsometry and Fourier transform infrared spectroscopy. A key observation is the presence of donors in the vicinity of the implanted region, resulting in extensive counterdoping of p-type c-Si. Redistribution of the oxygen atoms during the high-temperature anneal results in sharp interfaces aiding the formation of a heterojunction. Mesa-type diodes on the implanted sample exhibit excellent rectification with a diode ideality factor n of 1.2 and a reverse saturation current density of 1×10-8 A/cm2. The near-surface region is shown to be crucial for achieving the high rectification behavior.",
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Electrical transport across oxygen-doped-silicon buried layers by substoichiometric oxygen ion implantation in silicon. / Srikanth, K.; Ashok, S.

In: Applied Physics Letters, Vol. 63, No. 23, 01.12.1993, p. 3188-3190.

Research output: Contribution to journalArticle

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