Electrical Tunability of Domain Wall Conductivity in LiNbO3 Thin Films

Haidong Lu, Yueze Tan, James P.V. McConville, Zahra Ahmadi, Bo Wang, Michele Conroy, Kalani Moore, Ursel Bangert, Jeffrey E. Shield, Long Qing Chen, J. Marty Gregg, Alexei Gruverman

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Domain wall nanoelectronics is a rapidly evolving field, which explores the diverse electronic properties of the ferroelectric domain walls for application in low-dimensional electronic systems. One of the most prominent features of the ferroelectric domain walls is their electrical conductivity. Here, using a combination of scanning probe and scanning transmission electron microscopy, the mechanism of the tunable conducting behavior of the domain walls in the sub-micrometer thick films of the technologically important ferroelectric LiNbO3 is explored. It is found that the electric bias generates stable domains with strongly inclined domain boundaries with the inclination angle reaching 20° with respect to the polar axis. The head-to-head domain boundaries exhibit high conductance, which can be modulated by application of the sub-coercive voltage. Electron microscopy visualization of the electrically written domains and piezoresponse force microscopy imaging of the very same domains reveals that the gradual and reversible transition between the conducting and insulating states of the domain walls results from the electrically induced wall bending near the sample surface. The observed modulation of the wall conductance is corroborated by the phase-field modeling. The results open a possibility for exploiting the conducting domain walls as the electrically controllable functional elements in the multilevel logic nanoelectronics devices.

Original languageEnglish (US)
Article number1902890
JournalAdvanced Materials
Volume31
Issue number48
DOIs
StatePublished - Nov 1 2019

Fingerprint

Domain walls
Thin films
Ferroelectric materials
Nanoelectronics
Thick films
Electronic properties
Electron microscopy
lithium niobate
Microscopic examination
Visualization
Modulation
Transmission electron microscopy
Scanning
Imaging techniques
Scanning electron microscopy
Electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lu, H., Tan, Y., McConville, J. P. V., Ahmadi, Z., Wang, B., Conroy, M., ... Gruverman, A. (2019). Electrical Tunability of Domain Wall Conductivity in LiNbO3 Thin Films. Advanced Materials, 31(48), [1902890]. https://doi.org/10.1002/adma.201902890
Lu, Haidong ; Tan, Yueze ; McConville, James P.V. ; Ahmadi, Zahra ; Wang, Bo ; Conroy, Michele ; Moore, Kalani ; Bangert, Ursel ; Shield, Jeffrey E. ; Chen, Long Qing ; Gregg, J. Marty ; Gruverman, Alexei. / Electrical Tunability of Domain Wall Conductivity in LiNbO3 Thin Films. In: Advanced Materials. 2019 ; Vol. 31, No. 48.
@article{5efe76f92e6d4263b4b03170815b531b,
title = "Electrical Tunability of Domain Wall Conductivity in LiNbO3 Thin Films",
abstract = "Domain wall nanoelectronics is a rapidly evolving field, which explores the diverse electronic properties of the ferroelectric domain walls for application in low-dimensional electronic systems. One of the most prominent features of the ferroelectric domain walls is their electrical conductivity. Here, using a combination of scanning probe and scanning transmission electron microscopy, the mechanism of the tunable conducting behavior of the domain walls in the sub-micrometer thick films of the technologically important ferroelectric LiNbO3 is explored. It is found that the electric bias generates stable domains with strongly inclined domain boundaries with the inclination angle reaching 20° with respect to the polar axis. The head-to-head domain boundaries exhibit high conductance, which can be modulated by application of the sub-coercive voltage. Electron microscopy visualization of the electrically written domains and piezoresponse force microscopy imaging of the very same domains reveals that the gradual and reversible transition between the conducting and insulating states of the domain walls results from the electrically induced wall bending near the sample surface. The observed modulation of the wall conductance is corroborated by the phase-field modeling. The results open a possibility for exploiting the conducting domain walls as the electrically controllable functional elements in the multilevel logic nanoelectronics devices.",
author = "Haidong Lu and Yueze Tan and McConville, {James P.V.} and Zahra Ahmadi and Bo Wang and Michele Conroy and Kalani Moore and Ursel Bangert and Shield, {Jeffrey E.} and Chen, {Long Qing} and Gregg, {J. Marty} and Alexei Gruverman",
year = "2019",
month = "11",
day = "1",
doi = "10.1002/adma.201902890",
language = "English (US)",
volume = "31",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "48",

}

Lu, H, Tan, Y, McConville, JPV, Ahmadi, Z, Wang, B, Conroy, M, Moore, K, Bangert, U, Shield, JE, Chen, LQ, Gregg, JM & Gruverman, A 2019, 'Electrical Tunability of Domain Wall Conductivity in LiNbO3 Thin Films', Advanced Materials, vol. 31, no. 48, 1902890. https://doi.org/10.1002/adma.201902890

Electrical Tunability of Domain Wall Conductivity in LiNbO3 Thin Films. / Lu, Haidong; Tan, Yueze; McConville, James P.V.; Ahmadi, Zahra; Wang, Bo; Conroy, Michele; Moore, Kalani; Bangert, Ursel; Shield, Jeffrey E.; Chen, Long Qing; Gregg, J. Marty; Gruverman, Alexei.

In: Advanced Materials, Vol. 31, No. 48, 1902890, 01.11.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical Tunability of Domain Wall Conductivity in LiNbO3 Thin Films

AU - Lu, Haidong

AU - Tan, Yueze

AU - McConville, James P.V.

AU - Ahmadi, Zahra

AU - Wang, Bo

AU - Conroy, Michele

AU - Moore, Kalani

AU - Bangert, Ursel

AU - Shield, Jeffrey E.

AU - Chen, Long Qing

AU - Gregg, J. Marty

AU - Gruverman, Alexei

PY - 2019/11/1

Y1 - 2019/11/1

N2 - Domain wall nanoelectronics is a rapidly evolving field, which explores the diverse electronic properties of the ferroelectric domain walls for application in low-dimensional electronic systems. One of the most prominent features of the ferroelectric domain walls is their electrical conductivity. Here, using a combination of scanning probe and scanning transmission electron microscopy, the mechanism of the tunable conducting behavior of the domain walls in the sub-micrometer thick films of the technologically important ferroelectric LiNbO3 is explored. It is found that the electric bias generates stable domains with strongly inclined domain boundaries with the inclination angle reaching 20° with respect to the polar axis. The head-to-head domain boundaries exhibit high conductance, which can be modulated by application of the sub-coercive voltage. Electron microscopy visualization of the electrically written domains and piezoresponse force microscopy imaging of the very same domains reveals that the gradual and reversible transition between the conducting and insulating states of the domain walls results from the electrically induced wall bending near the sample surface. The observed modulation of the wall conductance is corroborated by the phase-field modeling. The results open a possibility for exploiting the conducting domain walls as the electrically controllable functional elements in the multilevel logic nanoelectronics devices.

AB - Domain wall nanoelectronics is a rapidly evolving field, which explores the diverse electronic properties of the ferroelectric domain walls for application in low-dimensional electronic systems. One of the most prominent features of the ferroelectric domain walls is their electrical conductivity. Here, using a combination of scanning probe and scanning transmission electron microscopy, the mechanism of the tunable conducting behavior of the domain walls in the sub-micrometer thick films of the technologically important ferroelectric LiNbO3 is explored. It is found that the electric bias generates stable domains with strongly inclined domain boundaries with the inclination angle reaching 20° with respect to the polar axis. The head-to-head domain boundaries exhibit high conductance, which can be modulated by application of the sub-coercive voltage. Electron microscopy visualization of the electrically written domains and piezoresponse force microscopy imaging of the very same domains reveals that the gradual and reversible transition between the conducting and insulating states of the domain walls results from the electrically induced wall bending near the sample surface. The observed modulation of the wall conductance is corroborated by the phase-field modeling. The results open a possibility for exploiting the conducting domain walls as the electrically controllable functional elements in the multilevel logic nanoelectronics devices.

UR - http://www.scopus.com/inward/record.url?scp=85073997025&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073997025&partnerID=8YFLogxK

U2 - 10.1002/adma.201902890

DO - 10.1002/adma.201902890

M3 - Article

C2 - 31588637

AN - SCOPUS:85073997025

VL - 31

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 48

M1 - 1902890

ER -

Lu H, Tan Y, McConville JPV, Ahmadi Z, Wang B, Conroy M et al. Electrical Tunability of Domain Wall Conductivity in LiNbO3 Thin Films. Advanced Materials. 2019 Nov 1;31(48). 1902890. https://doi.org/10.1002/adma.201902890