Electrically controlled non-volatile switching of magnetism in multiferroic heterostructures via engineered ferroelastic domain states

Ming Liu, Tianxiang Nan, Jia Mian Hu, Shi Shun Zhao, Ziyao Zhou, Chen Ying Wang, Zhuang De Jiang, Wei Ren, Zuo Guang Ye, Long Qing Chen, Nian X. Sun

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

In this work we addressed a key challenge in realizing multiferroics-based reconfigurable magnetic devices, which is the ability to switch between distinct collective magnetic states in a reversible and stable manner with a control voltage. Three possible non-volatile switching mechanisms have been demonstrated, arising from the nature of the domain states in pervoskite PZN-PT crystal that the ferroelectric polarization reversal is partially coupled to the ferroelastic strain. Electric impulse non-volatile control of magnetic anisotropy in FeGaB/PZN-PT and domain distribution of FeGaB during the ferroelectric switching have been observed, which agrees very well with simulation results. These approaches provide a platform for realizing electric impulse non-volatile tuning of the order parameters that are coupled to the lattice strain in thin-film heterostructures, showing great potentials in achieving reconfigurable, compact, light-weight and ultra-low-power electronics.

Original languageEnglish (US)
Article numbere316
JournalNPG Asia Materials
Volume8
Issue number9
DOIs
StatePublished - Sep 30 2016

All Science Journal Classification (ASJC) codes

  • Modeling and Simulation
  • Materials Science(all)
  • Condensed Matter Physics

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