Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors

Ryan J. Waskiewicz, Brian R. Manning, Duane J. McCrory, Patrick M. Lenahan

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate high signal-to-noise electrically detected electron-nuclear double resonance measurements on fully processed bipolar junction transistors at room temperature. This work indicates that the unparalleled analytical power of electron-nuclear double resonance in the identification of paramagnetic point defects can be exploited in the study of defects within fully functional solid-state electronic devices.

Original languageEnglish (US)
Article number125709
JournalJournal of Applied Physics
Volume126
Issue number12
DOIs
StatePublished - Sep 28 2019

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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