Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors

Ryan J. Waskiewicz, Brian R. Manning, Duane J. McCrory, Patrick M. Lenahan

Research output: Contribution to journalArticle

Abstract

We demonstrate high signal-to-noise electrically detected electron-nuclear double resonance measurements on fully processed bipolar junction transistors at room temperature. This work indicates that the unparalleled analytical power of electron-nuclear double resonance in the identification of paramagnetic point defects can be exploited in the study of defects within fully functional solid-state electronic devices.

Original languageEnglish (US)
Article number125709
JournalJournal of Applied Physics
Volume126
Issue number12
DOIs
StatePublished - Sep 28 2019

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junction transistors
bipolar transistors
point defects
electrons
solid state
defects
room temperature
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors. / Waskiewicz, Ryan J.; Manning, Brian R.; McCrory, Duane J.; Lenahan, Patrick M.

In: Journal of Applied Physics, Vol. 126, No. 12, 125709, 28.09.2019.

Research output: Contribution to journalArticle

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