Electrically detected magnetic resonance in dielectric semiconductor systems of current interest

P. M. Lenahan, C. J. Cochrane, J. P. Campbell, J. T. Ryan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Several electrically detected magnetic resonance techniques provide insight into the physical and chemical structure of technologically significant deep level defects in solid state electronics. Spin dependent recombination is sensitive to deep level defects within semiconductors or at semiconductor dielectric interfaces. Spin dependent trap assisted tunneling can identify defects in dielectric films and , under some circumstances, can provide fairly precise information relating energy levels to physical/ structural information about the defects under observation.

Original languageEnglish (US)
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
PublisherElectrochemical Society Inc.
Pages605-627
Number of pages23
Edition4
ISBN (Electronic)9781607682158
ISBN (Print)9781566778657
DOIs
StatePublished - 2011

Publication series

NameECS Transactions
Number4
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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