Electrically detected magnetic resonance in dielectric semiconductor systems of current interest

P. M. Lenahan, C. J. Cochrane, J. P. Campbell, J. T. Ryan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Several electrically detected magnetic resonance techniques provide insight into the physical and chemical structure of technologically significant deep level defects in solid state electronics. Spin dependent recombination is sensitive to deep level defects within semiconductors or at semiconductor dielectric interfaces. Spin dependent trap assisted tunneling can identify defects in dielectric films and , under some circumstances, can provide fairly precise information relating energy levels to physical/ structural information about the defects under observation.

Original languageEnglish (US)
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Pages605-627
Number of pages23
Edition4
DOIs
StatePublished - Aug 2 2011
EventSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada
Duration: May 1 2011May 6 2011

Publication series

NameECS Transactions
Number4
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period5/1/115/6/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Lenahan, P. M., Cochrane, C. J., Campbell, J. P., & Ryan, J. T. (2011). Electrically detected magnetic resonance in dielectric semiconductor systems of current interest. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 (4 ed., pp. 605-627). (ECS Transactions; Vol. 35, No. 4). https://doi.org/10.1149/1.3572308