Electrically detected magnetic resonance studies of processing variations in 4H SiC based MOSFETs

C. J. Cochrane, Patrick M. Lenahan, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

We apply electrically detected magnetic resonance (EDMR) to variously processed 4H SiC MOSFETs from two vendors. Although, the EDMR line shapes observed are nearly the same for vendor 1 devices subjected to a nitric oxide (NO) anneal and devices without it, the relationship between EDMR and gate voltage differs greatly between these samples. Furthermore, the EDMR response versus gate bias varies dramatically. EDMR results from a third device produced by a second vendor are very different from those provided by the first vendor. This result implies that significantly different defect populations are present in devices fabricated by different vendors.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsTakashi Fuyuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Akira Suzuki
PublisherTrans Tech Publications Ltd
Pages719-722
Number of pages4
ISBN (Print)9780878493579
StatePublished - Jan 1 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476

Conference

Conference12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period10/14/0710/19/07

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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