Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs

Corey J. Cochrane, Patrick M. Lenahan, Aivars Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

It is well known that 4H silicon carbide (SiC) based metal oxide silicon field effect transistors (MOSFETs) have great promise in high power and high temperature applications. The reliability and performance of these MOSFETs is currently limited by the presence of SiC/SiO 2 interface and near interface traps which are poorly understood. Conventional electron paramagnetic resonance (EPR) studies of silicon samples have been utilized to argue for carbon dangling bond interface traps [1]. For several years, with several coworkers, we have explored these silicon carbide based MOSFETs with electrically detected magnetic resonance (EDMR), [2,3] establishing a connection between an isotropic EDMR spectrum with g2.003 and deep level defects in the interface/near interface region of SiC MOSFETs. We tentatively linked the spectrum to a silicon vacancy or closely related defect. This assessment was tentative because we were not previously able to quantitatively evaluate the electron nuclear hyperfine interactions at the site. Through multiple improvements in EDMR hardware and data acquisition software, we have achieved a very large improvement in sensitivity and resolution in EDMR, which allows us to detect side peak features in the EDMR spectra caused by electron nuclear hyperfine interactions. This improved resolution allows far more definitive conclusions to be drawn about defect structure. In this work, we provide extremely strong experimental evidence identifying the structure of that defect. The evidence comes from very high resolution and sensitivity fast passage (FP) mode [4, 5] electrically detected magnetic resonance (EDMR) or FPEDMR of the ubiquitous EDMR spectrum.

Original languageEnglish (US)
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
StatePublished - Dec 1 2011
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: Dec 7 2011Dec 9 2011

Publication series

Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period12/7/1112/9/11

Fingerprint

Silicon oxides
Magnetic resonance
Field effect transistors
Silicon carbide
Metals
Defects
Silicon
Dangling bonds
High temperature applications
Electrons
Defect structures
Vacancies
Paramagnetic resonance
Data acquisition
Hardware
Carbon

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Cochrane, C. J., Lenahan, P. M., & Lelis, A. (2011). Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135142] (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135142
Cochrane, Corey J. ; Lenahan, Patrick M. ; Lelis, Aivars. / Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs. 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. (2011 International Semiconductor Device Research Symposium, ISDRS 2011).
@inproceedings{f0ebd77d75fe4cfabcb0d396a60eaf38,
title = "Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs",
abstract = "It is well known that 4H silicon carbide (SiC) based metal oxide silicon field effect transistors (MOSFETs) have great promise in high power and high temperature applications. The reliability and performance of these MOSFETs is currently limited by the presence of SiC/SiO 2 interface and near interface traps which are poorly understood. Conventional electron paramagnetic resonance (EPR) studies of silicon samples have been utilized to argue for carbon dangling bond interface traps [1]. For several years, with several coworkers, we have explored these silicon carbide based MOSFETs with electrically detected magnetic resonance (EDMR), [2,3] establishing a connection between an isotropic EDMR spectrum with g2.003 and deep level defects in the interface/near interface region of SiC MOSFETs. We tentatively linked the spectrum to a silicon vacancy or closely related defect. This assessment was tentative because we were not previously able to quantitatively evaluate the electron nuclear hyperfine interactions at the site. Through multiple improvements in EDMR hardware and data acquisition software, we have achieved a very large improvement in sensitivity and resolution in EDMR, which allows us to detect side peak features in the EDMR spectra caused by electron nuclear hyperfine interactions. This improved resolution allows far more definitive conclusions to be drawn about defect structure. In this work, we provide extremely strong experimental evidence identifying the structure of that defect. The evidence comes from very high resolution and sensitivity fast passage (FP) mode [4, 5] electrically detected magnetic resonance (EDMR) or FPEDMR of the ubiquitous EDMR spectrum.",
author = "Cochrane, {Corey J.} and Lenahan, {Patrick M.} and Aivars Lelis",
year = "2011",
month = "12",
day = "1",
doi = "10.1109/ISDRS.2011.6135142",
language = "English (US)",
isbn = "9781457717550",
series = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",
booktitle = "2011 International Semiconductor Device Research Symposium, ISDRS 2011",

}

Cochrane, CJ, Lenahan, PM & Lelis, A 2011, Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135142, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 12/7/11. https://doi.org/10.1109/ISDRS.2011.6135142

Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs. / Cochrane, Corey J.; Lenahan, Patrick M.; Lelis, Aivars.

2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135142 (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs

AU - Cochrane, Corey J.

AU - Lenahan, Patrick M.

AU - Lelis, Aivars

PY - 2011/12/1

Y1 - 2011/12/1

N2 - It is well known that 4H silicon carbide (SiC) based metal oxide silicon field effect transistors (MOSFETs) have great promise in high power and high temperature applications. The reliability and performance of these MOSFETs is currently limited by the presence of SiC/SiO 2 interface and near interface traps which are poorly understood. Conventional electron paramagnetic resonance (EPR) studies of silicon samples have been utilized to argue for carbon dangling bond interface traps [1]. For several years, with several coworkers, we have explored these silicon carbide based MOSFETs with electrically detected magnetic resonance (EDMR), [2,3] establishing a connection between an isotropic EDMR spectrum with g2.003 and deep level defects in the interface/near interface region of SiC MOSFETs. We tentatively linked the spectrum to a silicon vacancy or closely related defect. This assessment was tentative because we were not previously able to quantitatively evaluate the electron nuclear hyperfine interactions at the site. Through multiple improvements in EDMR hardware and data acquisition software, we have achieved a very large improvement in sensitivity and resolution in EDMR, which allows us to detect side peak features in the EDMR spectra caused by electron nuclear hyperfine interactions. This improved resolution allows far more definitive conclusions to be drawn about defect structure. In this work, we provide extremely strong experimental evidence identifying the structure of that defect. The evidence comes from very high resolution and sensitivity fast passage (FP) mode [4, 5] electrically detected magnetic resonance (EDMR) or FPEDMR of the ubiquitous EDMR spectrum.

AB - It is well known that 4H silicon carbide (SiC) based metal oxide silicon field effect transistors (MOSFETs) have great promise in high power and high temperature applications. The reliability and performance of these MOSFETs is currently limited by the presence of SiC/SiO 2 interface and near interface traps which are poorly understood. Conventional electron paramagnetic resonance (EPR) studies of silicon samples have been utilized to argue for carbon dangling bond interface traps [1]. For several years, with several coworkers, we have explored these silicon carbide based MOSFETs with electrically detected magnetic resonance (EDMR), [2,3] establishing a connection between an isotropic EDMR spectrum with g2.003 and deep level defects in the interface/near interface region of SiC MOSFETs. We tentatively linked the spectrum to a silicon vacancy or closely related defect. This assessment was tentative because we were not previously able to quantitatively evaluate the electron nuclear hyperfine interactions at the site. Through multiple improvements in EDMR hardware and data acquisition software, we have achieved a very large improvement in sensitivity and resolution in EDMR, which allows us to detect side peak features in the EDMR spectra caused by electron nuclear hyperfine interactions. This improved resolution allows far more definitive conclusions to be drawn about defect structure. In this work, we provide extremely strong experimental evidence identifying the structure of that defect. The evidence comes from very high resolution and sensitivity fast passage (FP) mode [4, 5] electrically detected magnetic resonance (EDMR) or FPEDMR of the ubiquitous EDMR spectrum.

UR - http://www.scopus.com/inward/record.url?scp=84857230466&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857230466&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2011.6135142

DO - 10.1109/ISDRS.2011.6135142

M3 - Conference contribution

AN - SCOPUS:84857230466

SN - 9781457717550

T3 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

ER -

Cochrane CJ, Lenahan PM, Lelis A. Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135142. (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135142