Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs

M. A. Anders, P. M. Lenahan, J. Follman, S. D. Arthur, J. McMahon, L. Yu, X. Zhu, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

SiC MOSFETs show promise for high power and high temperature applications, but bias temperature instabilities may potentially limit the performance of these devices. Utilizing electrically detected magnetic resonance (EDMR), we show that three different defect centers are generated during NBTS. Although a complete understanding of the EDMR is not yet available, the results provide strong evidence for E' centers, hydrogen, and hydrogen complexes involvement in the NBTI phenomena.

Original languageEnglish (US)
Title of host publication2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages16-19
Number of pages4
ISBN (Electronic)9781479973088
DOIs
StatePublished - 2014
Event2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014 - South Lake Tahoe, United States
Duration: Oct 12 2014Oct 16 2014

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2015-February

Other

Other2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014
CountryUnited States
CitySouth Lake Tahoe
Period10/12/1410/16/14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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