Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs

M. A. Anders, Patrick M. Lenahan, J. Follman, S. D. Arthur, J. McMahon, L. Yu, X. Zhu, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

SiC MOSFETs show promise for high power and high temperature applications, but bias temperature instabilities may potentially limit the performance of these devices. Utilizing electrically detected magnetic resonance (EDMR), we show that three different defect centers are generated during NBTS. Although a complete understanding of the EDMR is not yet available, the results provide strong evidence for E' centers, hydrogen, and hydrogen complexes involvement in the NBTI phenomena.

Original languageEnglish (US)
Title of host publication2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages16-19
Number of pages4
ISBN (Electronic)9781479973088
DOIs
StatePublished - Jan 1 2014
Event2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014 - South Lake Tahoe, United States
Duration: Oct 12 2014Oct 16 2014

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2015-February

Other

Other2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014
CountryUnited States
CitySouth Lake Tahoe
Period10/12/1410/16/14

Fingerprint

Magnetic resonance
Hydrogen
High temperature applications
Defects
Temperature
4-nitrobenzylthioinosine
Negative bias temperature instability

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Anders, M. A., Lenahan, P. M., Follman, J., Arthur, S. D., McMahon, J., Yu, L., ... Lelis, A. J. (2014). Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs. In 2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014 (pp. 16-19). [7049497] (IEEE International Integrated Reliability Workshop Final Report; Vol. 2015-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW.2014.7049497
Anders, M. A. ; Lenahan, Patrick M. ; Follman, J. ; Arthur, S. D. ; McMahon, J. ; Yu, L. ; Zhu, X. ; Lelis, A. J. / Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs. 2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 16-19 (IEEE International Integrated Reliability Workshop Final Report).
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abstract = "SiC MOSFETs show promise for high power and high temperature applications, but bias temperature instabilities may potentially limit the performance of these devices. Utilizing electrically detected magnetic resonance (EDMR), we show that three different defect centers are generated during NBTS. Although a complete understanding of the EDMR is not yet available, the results provide strong evidence for E' centers, hydrogen, and hydrogen complexes involvement in the NBTI phenomena.",
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Anders, MA, Lenahan, PM, Follman, J, Arthur, SD, McMahon, J, Yu, L, Zhu, X & Lelis, AJ 2014, Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs. in 2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014., 7049497, IEEE International Integrated Reliability Workshop Final Report, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 16-19, 2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014, South Lake Tahoe, United States, 10/12/14. https://doi.org/10.1109/IIRW.2014.7049497

Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs. / Anders, M. A.; Lenahan, Patrick M.; Follman, J.; Arthur, S. D.; McMahon, J.; Yu, L.; Zhu, X.; Lelis, A. J.

2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 16-19 7049497 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2015-February).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Anders MA, Lenahan PM, Follman J, Arthur SD, McMahon J, Yu L et al. Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs. In 2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 16-19. 7049497. (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IIRW.2014.7049497