Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films

W. L. Warren, P. M. Lenahan, J. Kanicki

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

We have investigated the effects of different post-deposition temperature anneals and N-H concentrations, on the generation of ultraviolet (UV)-induced two-coordinated nitrogen dangling bonds in plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films using electron spin resonance (ESR). It is shown that the nitrogen dangling bond is activated by post-deposition anneals with temperatures as low as 500°C in N-rich PECVD nitride films followed by subsequent UV broadband illumination. It also appears that there is a possible correlation between the initial N-H concentration in the films and the concentration of generated nitrogen dangling bonds following the anneal/UV sequence. We also report the charge state associated with the nitrogen dangling bond using a combination of ESR and capacitance versus voltage measurements; these measurements suggest that this two-coordinated defect is electrically neutral when paramagnetic.

Original languageEnglish (US)
Pages (from-to)2220-2225
Number of pages6
JournalJournal of Applied Physics
Volume70
Issue number4
DOIs
StatePublished - 1991

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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