Electrically reversible cracks in an intermetallic film controlled by an electric field

Z. Q. Liu, J. H. Liu, M. D. Biegalski, Jiamian Hu, Shunli Shang, Y. Ji, J. M. Wang, S. L. Hsu, A. T. Wong, M. J. Cordill, B. Gludovatz, C. Marker, H. Yan, Z. X. Feng, L. You, M. W. Lin, T. Z. Ward, Zi-kui Liu, C. B. Jiang, Long-qing Chen & 3 others R. O. Ritchie, H. M. Christen, R. Ramesh

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film.

Original languageEnglish (US)
Article number9
JournalNature communications
Volume9
Issue number1
DOIs
StatePublished - Dec 1 2018

Fingerprint

Intermetallics
intermetallics
cracks
Electric fields
Cracks
Equipment and Supplies
Temperature
electric fields
closing
cycles
endurance
Ferroelectric materials
Durability
low frequencies
solid state
Data storage equipment
Thin films
Testing
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Liu, Z. Q. ; Liu, J. H. ; Biegalski, M. D. ; Hu, Jiamian ; Shang, Shunli ; Ji, Y. ; Wang, J. M. ; Hsu, S. L. ; Wong, A. T. ; Cordill, M. J. ; Gludovatz, B. ; Marker, C. ; Yan, H. ; Feng, Z. X. ; You, L. ; Lin, M. W. ; Ward, T. Z. ; Liu, Zi-kui ; Jiang, C. B. ; Chen, Long-qing ; Ritchie, R. O. ; Christen, H. M. ; Ramesh, R. / Electrically reversible cracks in an intermetallic film controlled by an electric field. In: Nature communications. 2018 ; Vol. 9, No. 1.
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abstract = "Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film.",
author = "Liu, {Z. Q.} and Liu, {J. H.} and Biegalski, {M. D.} and Jiamian Hu and Shunli Shang and Y. Ji and Wang, {J. M.} and Hsu, {S. L.} and Wong, {A. T.} and Cordill, {M. J.} and B. Gludovatz and C. Marker and H. Yan and Feng, {Z. X.} and L. You and Lin, {M. W.} and Ward, {T. Z.} and Zi-kui Liu and Jiang, {C. B.} and Long-qing Chen and Ritchie, {R. O.} and Christen, {H. M.} and R. Ramesh",
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Liu, ZQ, Liu, JH, Biegalski, MD, Hu, J, Shang, S, Ji, Y, Wang, JM, Hsu, SL, Wong, AT, Cordill, MJ, Gludovatz, B, Marker, C, Yan, H, Feng, ZX, You, L, Lin, MW, Ward, TZ, Liu, Z, Jiang, CB, Chen, L, Ritchie, RO, Christen, HM & Ramesh, R 2018, 'Electrically reversible cracks in an intermetallic film controlled by an electric field', Nature communications, vol. 9, no. 1, 9. https://doi.org/10.1038/s41467-017-02454-8

Electrically reversible cracks in an intermetallic film controlled by an electric field. / Liu, Z. Q.; Liu, J. H.; Biegalski, M. D.; Hu, Jiamian; Shang, Shunli; Ji, Y.; Wang, J. M.; Hsu, S. L.; Wong, A. T.; Cordill, M. J.; Gludovatz, B.; Marker, C.; Yan, H.; Feng, Z. X.; You, L.; Lin, M. W.; Ward, T. Z.; Liu, Zi-kui; Jiang, C. B.; Chen, Long-qing; Ritchie, R. O.; Christen, H. M.; Ramesh, R.

In: Nature communications, Vol. 9, No. 1, 9, 01.12.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrically reversible cracks in an intermetallic film controlled by an electric field

AU - Liu, Z. Q.

AU - Liu, J. H.

AU - Biegalski, M. D.

AU - Hu, Jiamian

AU - Shang, Shunli

AU - Ji, Y.

AU - Wang, J. M.

AU - Hsu, S. L.

AU - Wong, A. T.

AU - Cordill, M. J.

AU - Gludovatz, B.

AU - Marker, C.

AU - Yan, H.

AU - Feng, Z. X.

AU - You, L.

AU - Lin, M. W.

AU - Ward, T. Z.

AU - Liu, Zi-kui

AU - Jiang, C. B.

AU - Chen, Long-qing

AU - Ritchie, R. O.

AU - Christen, H. M.

AU - Ramesh, R.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film.

AB - Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film.

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U2 - 10.1038/s41467-017-02454-8

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M3 - Article

VL - 9

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

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ER -