Electrically reversible cracks in an intermetallic film controlled by an electric field

Z. Q. Liu; J. H. Liu; M. D. Biegalski; J. M. Hu; S. L. Shang; Y. Ji; J. M. Wang; S. L. Hsu; A. T. Wong; M. J. Cordill; B. Gludovatz; C. Marker; H. Yan; Z. X. Feng; L. You; M. W. Lin; T. Z. Ward; Z. K. Liu; C. B. Jiang; L. Q. Chen; R. O. Ritchie; H. M. Christen; R. Ramesh

doi:10.1038/s41467-017-02454-8

Electrically reversible cracks in an intermetallic film controlled by an electric field

Z. Q. Liu, J. H. Liu, M. D. Biegalski, J. M. Hu, S. L. Shang, Y. Ji, J. M. Wang, S. L. Hsu, A. T. Wong, M. J. Cordill, B. Gludovatz, C. Marker, H. Yan, Z. X. Feng, L. You, M. W. Lin, T. Z. Ward, Z. K. Liu, C. B. Jiang, L. Q. ChenR. O. Ritchie, H. M. Christen, R. Ramesh

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 10⁸ is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 10⁷ cycles under 10-μs pulses, without catastrophic failure of the film.

Original language	English (US)
Article number	41
Journal	Nature communications
Volume	9
Issue number	1
DOIs	https://doi.org/10.1038/s41467-017-02454-8
State	Published - Dec 1 2018

All Science Journal Classification (ASJC) codes

Chemistry(all)
Biochemistry, Genetics and Molecular Biology(all)
Physics and Astronomy(all)

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Liu, Z. Q., Liu, J. H., Biegalski, M. D., Hu, J. M., Shang, S. L., Ji, Y., Wang, J. M., Hsu, S. L., Wong, A. T., Cordill, M. J., Gludovatz, B., Marker, C., Yan, H., Feng, Z. X., You, L., Lin, M. W., Ward, T. Z., Liu, Z. K., Jiang, C. B., ... Ramesh, R. (2018). Electrically reversible cracks in an intermetallic film controlled by an electric field. Nature communications, 9(1), [41]. https://doi.org/10.1038/s41467-017-02454-8

Liu, Z. Q. ; Liu, J. H. ; Biegalski, M. D. ; Hu, J. M. ; Shang, S. L. ; Ji, Y. ; Wang, J. M. ; Hsu, S. L. ; Wong, A. T. ; Cordill, M. J. ; Gludovatz, B. ; Marker, C. ; Yan, H. ; Feng, Z. X. ; You, L. ; Lin, M. W. ; Ward, T. Z. ; Liu, Z. K. ; Jiang, C. B. ; Chen, L. Q. ; Ritchie, R. O. ; Christen, H. M. ; Ramesh, R. / Electrically reversible cracks in an intermetallic film controlled by an electric field. In: Nature communications. 2018 ; Vol. 9, No. 1.

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title = "Electrically reversible cracks in an intermetallic film controlled by an electric field",

abstract = "Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film.",

author = "Liu, {Z. Q.} and Liu, {J. H.} and Biegalski, {M. D.} and Hu, {J. M.} and Shang, {S. L.} and Y. Ji and Wang, {J. M.} and Hsu, {S. L.} and Wong, {A. T.} and Cordill, {M. J.} and B. Gludovatz and C. Marker and H. Yan and Feng, {Z. X.} and L. You and Lin, {M. W.} and Ward, {T. Z.} and Liu, {Z. K.} and Jiang, {C. B.} and Chen, {L. Q.} and Ritchie, {R. O.} and Christen, {H. M.} and R. Ramesh",

year = "2018",

month = dec,

day = "1",

doi = "10.1038/s41467-017-02454-8",

language = "English (US)",

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Liu, ZQ, Liu, JH, Biegalski, MD, Hu, JM, Shang, SL, Ji, Y, Wang, JM, Hsu, SL, Wong, AT, Cordill, MJ, Gludovatz, B, Marker, C, Yan, H, Feng, ZX, You, L, Lin, MW, Ward, TZ, Liu, ZK, Jiang, CB, Chen, LQ, Ritchie, RO, Christen, HM & Ramesh, R 2018, 'Electrically reversible cracks in an intermetallic film controlled by an electric field', Nature communications, vol. 9, no. 1, 41. https://doi.org/10.1038/s41467-017-02454-8

Electrically reversible cracks in an intermetallic film controlled by an electric field. / Liu, Z. Q.; Liu, J. H.; Biegalski, M. D.; Hu, J. M.; Shang, S. L.; Ji, Y.; Wang, J. M.; Hsu, S. L.; Wong, A. T.; Cordill, M. J.; Gludovatz, B.; Marker, C.; Yan, H.; Feng, Z. X.; You, L.; Lin, M. W.; Ward, T. Z.; Liu, Z. K.; Jiang, C. B.; Chen, L. Q.; Ritchie, R. O.; Christen, H. M.; Ramesh, R.

In: Nature communications, Vol. 9, No. 1, 41, 01.12.2018.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Electrically reversible cracks in an intermetallic film controlled by an electric field

AU - Liu, Z. Q.

AU - Liu, J. H.

AU - Biegalski, M. D.

AU - Hu, J. M.

AU - Shang, S. L.

AU - Ji, Y.

AU - Wang, J. M.

AU - Hsu, S. L.

AU - Wong, A. T.

AU - Cordill, M. J.

AU - Gludovatz, B.

AU - Marker, C.

AU - Yan, H.

AU - Feng, Z. X.

AU - You, L.

AU - Lin, M. W.

AU - Ward, T. Z.

AU - Liu, Z. K.

AU - Jiang, C. B.

AU - Chen, L. Q.

AU - Ritchie, R. O.

AU - Christen, H. M.

AU - Ramesh, R.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film.

AB - Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film.

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JO - Nature Communications

JF - Nature Communications

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