Abstract
We evaluate the heterogeneous integration of the layered correlated electron material, 1T-TaS2, on semiconducting 2H-MoS2 for the realization of an all two-dimensional insulator-to-metal (IMT) phase transition device. First principles calculations investigate the band structure of the resulting heterostructure and confirm the existence of a charge density wave (CDW)-based bandgap. 1T-TaS2 films are synthesized via powder vapor deposition on monolayer MoS2 substrates and shown to exhibit CDW induced IMT phase transitions. Both Raman and electrical measurements display reversible commensurate to nearly commensurate CDW IMT phase transitions. Finally, a phase transition transistor device is demonstrated that harnesses the electrically triggered abrupt IMT in 1T-TaS2 and semiconducting properties of 2H-MoS2.
| Original language | English (US) |
|---|---|
| Article number | 142101 |
| Journal | Applied Physics Letters |
| Volume | 113 |
| Issue number | 14 |
| DOIs | |
| State | Published - Oct 1 2018 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Electrically triggered insulator-to-metal phase transition in two-dimensional (2D) heterostructures. / Grisafe, Benjamin; Zhao, Rui; Ghosh, Ram Krishna; Robinson, Joshua A.; Datta, Suman.
In: Applied Physics Letters, Vol. 113, No. 14, 142101, 01.10.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electrically triggered insulator-to-metal phase transition in two-dimensional (2D) heterostructures
AU - Grisafe, Benjamin
AU - Zhao, Rui
AU - Ghosh, Ram Krishna
AU - Robinson, Joshua A.
AU - Datta, Suman
PY - 2018/10/1
Y1 - 2018/10/1
N2 - We evaluate the heterogeneous integration of the layered correlated electron material, 1T-TaS2, on semiconducting 2H-MoS2 for the realization of an all two-dimensional insulator-to-metal (IMT) phase transition device. First principles calculations investigate the band structure of the resulting heterostructure and confirm the existence of a charge density wave (CDW)-based bandgap. 1T-TaS2 films are synthesized via powder vapor deposition on monolayer MoS2 substrates and shown to exhibit CDW induced IMT phase transitions. Both Raman and electrical measurements display reversible commensurate to nearly commensurate CDW IMT phase transitions. Finally, a phase transition transistor device is demonstrated that harnesses the electrically triggered abrupt IMT in 1T-TaS2 and semiconducting properties of 2H-MoS2.
AB - We evaluate the heterogeneous integration of the layered correlated electron material, 1T-TaS2, on semiconducting 2H-MoS2 for the realization of an all two-dimensional insulator-to-metal (IMT) phase transition device. First principles calculations investigate the band structure of the resulting heterostructure and confirm the existence of a charge density wave (CDW)-based bandgap. 1T-TaS2 films are synthesized via powder vapor deposition on monolayer MoS2 substrates and shown to exhibit CDW induced IMT phase transitions. Both Raman and electrical measurements display reversible commensurate to nearly commensurate CDW IMT phase transitions. Finally, a phase transition transistor device is demonstrated that harnesses the electrically triggered abrupt IMT in 1T-TaS2 and semiconducting properties of 2H-MoS2.
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U2 - 10.1063/1.5044185
DO - 10.1063/1.5044185
M3 - Article
AN - SCOPUS:85054328525
VL - 113
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
M1 - 142101
ER -