We evaluate the heterogeneous integration of the layered correlated electron material, 1T-TaS2, on semiconducting 2H-MoS2 for the realization of an all two-dimensional insulator-to-metal (IMT) phase transition device. First principles calculations investigate the band structure of the resulting heterostructure and confirm the existence of a charge density wave (CDW)-based bandgap. 1T-TaS2 films are synthesized via powder vapor deposition on monolayer MoS2 substrates and shown to exhibit CDW induced IMT phase transitions. Both Raman and electrical measurements display reversible commensurate to nearly commensurate CDW IMT phase transitions. Finally, a phase transition transistor device is demonstrated that harnesses the electrically triggered abrupt IMT in 1T-TaS2 and semiconducting properties of 2H-MoS2.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)