Atomically thin semiconducting crystals [such as molybdenum disulfide (MoS2)] have outstanding electrical, optical, and mechanical properties, thus making them excellent constitutive materials for innovating new two-dimensional (2D) nanoelectromechanical systems (NEMS). Although prototype structures have recently been demonstrated toward functional devices such as ultralow-power, high-frequency tunable oscillators and ultrasensitive resonant transducers, both electrical tunability and large dynamic range (DR) are critical and desirable. We report the first experimental demonstration of clearly defined single-, bi-, and trilayer MoS2 2Dresonant NEMS operating inthe very high frequency band (up to ∼120 MHz) with outstanding electrical tunability and DR. Through deterministic measurement and calibration, we discover that these 2D atomic layer devices have remarkably broad DR (up to ∼70 to 110 dB), in contrast to their 1D NEMS counterparts that are expected to have limited DR. These 2D devices, therefore, open avenues for efficiently tuning and strongly coupling the electronic, mechanical, and optical properties in atomic layer semiconducting devices and systems.
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