Electrically tunable single- and few-layer MoS2 nanoelectromechanical systems with broad dynamic range

Jaesung Lee, Zenghui Wang, Keliang He, Rui Yang, Jie Shan, Philip X.L. Feng

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Atomically thin semiconducting crystals [such as molybdenum disulfide (MoS2)] have outstanding electrical, optical, and mechanical properties, thus making them excellent constitutive materials for innovating new two-dimensional (2D) nanoelectromechanical systems (NEMS). Although prototype structures have recently been demonstrated toward functional devices such as ultralow-power, high-frequency tunable oscillators and ultrasensitive resonant transducers, both electrical tunability and large dynamic range (DR) are critical and desirable. We report the first experimental demonstration of clearly defined single-, bi-, and trilayer MoS2 2Dresonant NEMS operating inthe very high frequency band (up to ∼120 MHz) with outstanding electrical tunability and DR. Through deterministic measurement and calibration, we discover that these 2D atomic layer devices have remarkably broad DR (up to ∼70 to 110 dB), in contrast to their 1D NEMS counterparts that are expected to have limited DR. These 2D devices, therefore, open avenues for efficiently tuning and strongly coupling the electronic, mechanical, and optical properties in atomic layer semiconducting devices and systems.

Original languageEnglish (US)
Article numberaao6653
JournalScience Advances
Volume4
Issue number3
DOIs
StatePublished - Mar 30 2018

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Equipment and Supplies
Transducers
Calibration
molybdenum disulfide

All Science Journal Classification (ASJC) codes

  • General

Cite this

Lee, Jaesung ; Wang, Zenghui ; He, Keliang ; Yang, Rui ; Shan, Jie ; Feng, Philip X.L. / Electrically tunable single- and few-layer MoS2 nanoelectromechanical systems with broad dynamic range. In: Science Advances. 2018 ; Vol. 4, No. 3.
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Electrically tunable single- and few-layer MoS2 nanoelectromechanical systems with broad dynamic range. / Lee, Jaesung; Wang, Zenghui; He, Keliang; Yang, Rui; Shan, Jie; Feng, Philip X.L.

In: Science Advances, Vol. 4, No. 3, aao6653, 30.03.2018.

Research output: Contribution to journalArticle

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