Electro-optical properties of PZN-PT single crystals

Y. Lu, Y. Barad, Z. Y. Cheng, S. E. Park, Qiming Zhang

    Research output: Contribution to conferencePaper

    Abstract

    In electro-optical devices, a crystal with a high electro-optical (E-O) coefficient is highly desirable, in order to reduce the half-wave voltage or the size of devices. This article reports the results of a recent investigation of the E-O coefficient in PZN-PT over a broad composition range.

    Original languageEnglish (US)
    Number of pages1
    StatePublished - Dec 1 2000
    EventConference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA
    Duration: May 7 2000May 12 2000

    Other

    OtherConference on Lasers and Electro-Optics (CLEO 2000)
    CitySan Francisco, CA, USA
    Period5/7/005/12/00

    Fingerprint

    Electrooptical devices
    Optical properties
    Single crystals
    optical properties
    Crystals
    single crystals
    Electric potential
    coefficients
    Chemical analysis
    electric potential
    crystals

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

    Cite this

    Lu, Y., Barad, Y., Cheng, Z. Y., Park, S. E., & Zhang, Q. (2000). Electro-optical properties of PZN-PT single crystals. Paper presented at Conference on Lasers and Electro-Optics (CLEO 2000), San Francisco, CA, USA, .
    Lu, Y. ; Barad, Y. ; Cheng, Z. Y. ; Park, S. E. ; Zhang, Qiming. / Electro-optical properties of PZN-PT single crystals. Paper presented at Conference on Lasers and Electro-Optics (CLEO 2000), San Francisco, CA, USA, .1 p.
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    abstract = "In electro-optical devices, a crystal with a high electro-optical (E-O) coefficient is highly desirable, in order to reduce the half-wave voltage or the size of devices. This article reports the results of a recent investigation of the E-O coefficient in PZN-PT over a broad composition range.",
    author = "Y. Lu and Y. Barad and Cheng, {Z. Y.} and Park, {S. E.} and Qiming Zhang",
    year = "2000",
    month = "12",
    day = "1",
    language = "English (US)",
    note = "Conference on Lasers and Electro-Optics (CLEO 2000) ; Conference date: 07-05-2000 Through 12-05-2000",

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    Lu, Y, Barad, Y, Cheng, ZY, Park, SE & Zhang, Q 2000, 'Electro-optical properties of PZN-PT single crystals' Paper presented at Conference on Lasers and Electro-Optics (CLEO 2000), San Francisco, CA, USA, 5/7/00 - 5/12/00, .

    Electro-optical properties of PZN-PT single crystals. / Lu, Y.; Barad, Y.; Cheng, Z. Y.; Park, S. E.; Zhang, Qiming.

    2000. Paper presented at Conference on Lasers and Electro-Optics (CLEO 2000), San Francisco, CA, USA, .

    Research output: Contribution to conferencePaper

    TY - CONF

    T1 - Electro-optical properties of PZN-PT single crystals

    AU - Lu, Y.

    AU - Barad, Y.

    AU - Cheng, Z. Y.

    AU - Park, S. E.

    AU - Zhang, Qiming

    PY - 2000/12/1

    Y1 - 2000/12/1

    N2 - In electro-optical devices, a crystal with a high electro-optical (E-O) coefficient is highly desirable, in order to reduce the half-wave voltage or the size of devices. This article reports the results of a recent investigation of the E-O coefficient in PZN-PT over a broad composition range.

    AB - In electro-optical devices, a crystal with a high electro-optical (E-O) coefficient is highly desirable, in order to reduce the half-wave voltage or the size of devices. This article reports the results of a recent investigation of the E-O coefficient in PZN-PT over a broad composition range.

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    M3 - Paper

    ER -

    Lu Y, Barad Y, Cheng ZY, Park SE, Zhang Q. Electro-optical properties of PZN-PT single crystals. 2000. Paper presented at Conference on Lasers and Electro-Optics (CLEO 2000), San Francisco, CA, USA, .