Electro-thermal reliability study of GaN high electron mobility transistors

B. Chatterjee, J. S. Lundh, J. Dallas, H. Kim, S. Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Self-heating in AlGaN/GaN high electron mobility transistors (HEMT) degrades device performance and reliability. Under nominal operating conditions, a so-called hot spot develops near the drain-side edge of the gate. The magnitude of the peak temperature at this local hot spot directly impacts device lifetime. Especially, such self-heating effects are aggravated in AlGaN/GaN HEMTs employing low cost silicon (Si) substrates that have relatively low thermal conductivity. In this work, GaN-on-Si HEMTs with symmetric geometries (identical gate-to-drain and gate-to-source lengths) were explored using thermoreflectance thermal imaging and infrared thermal microscopy to investigate and visualize the bias dependent self-heating phenomena. For the first time, a fully-coupled' electro-thermal modeling scheme was developed in order to validate experimental observations and study internal electro-thermal phenomena. It was found that under identical power dissipation conditions (P=VDS IDS=250 mW), a higher VDS bias (∼23V) results in 35% larger rise in peak junction temperature compared to that for a lower VDS (∼7.5 V) condition. The findings of this work confirm that bias conditions have a significant impact on device reliability and therefore must be considered when assessing device mean-time-to-failure (MTTF) through accelerated life time tests.

Original languageEnglish (US)
Title of host publicationProceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1247-1252
Number of pages6
ISBN (Electronic)9781509029945
DOIs
StatePublished - Jul 25 2017
Event16th IEEE InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017 - Orlando, United States
Duration: May 30 2017Jun 2 2017

Publication series

NameProceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017

Other

Other16th IEEE InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017
CountryUnited States
CityOrlando
Period5/30/176/2/17

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Fluid Flow and Transfer Processes
  • Electrical and Electronic Engineering

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    Chatterjee, B., Lundh, J. S., Dallas, J., Kim, H., & Choi, S. (2017). Electro-thermal reliability study of GaN high electron mobility transistors. In Proceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017 (pp. 1247-1252). [7992627] (Proceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ITHERM.2017.7992627