Abstract
Two-dimensional (2D) layered materials demonstrate their exquisite properties such as high temperature superconductivity, superlubricity, charge density wave, piezotronics, flextronics, straintronics, spintronics, valleytronics, and optoelectronics, mostly, at the monolayer limit. Following initial breakthroughs based on micromechanically exfoliated 2D monolayers, significant progress has been made in recent years toward the bottom-up synthesis of large-area monolayer 2D materials such as MoS 2 and WS 2 using physical vapor deposition and chemical vapor deposition techniques in order to facilitate their transition into commercial technologies. However, the nucleation and subsequent growth of the secondary, tertiary, and greater numbers of vertical layers poses a significant challenge not only toward the realization of uniform monolayers but also toward maintaining their consistent electronic and optoelectronic properties which change abruptly when transitioning from the monolayer to multilayer form. Chemical or physical techniques which can remove the unwanted top layers without compromising the material quality will have tremendous consequences toward the development of atomically flat, large-area, uniform monolayers of 2D materials. Here, we report a simple, elegant, and self-limiting electrochemical polishing technique that can thin down any arbitrary thickness of 2D material, irrespective of whether these are obtained using powder vapor transport or mechanical exfoliation, into their corresponding monolayer form at room temperature within a few seconds without compromising their atomistic integrity. The effectiveness of this electrochemical polishing technique is inherent to 2D transition-metal dichalcogenides owing to the stability of their basal planes, enhanced edge reactivity, and stronger than van der Waals interaction with the substrate. Our study also reveals that 2D monolayers are chemically more robust and corrosion resistant compared to their bulk counterparts in similar oxidative environments, which enables electrochemical polishing of such materials down to a monolayer.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 78-86 |
| Number of pages | 9 |
| Journal | ACS nano |
| Volume | 13 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 22 2019 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Engineering(all)
- Physics and Astronomy(all)
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Electrochemical Polishing of Two-Dimensional Materials. / Sebastian, Amritanand; Zhang, Fu; Dodda, Akhil; May-Rawding, Dan; Liu, He; Zhang, Tianyi; Terrones Maldonado, Mauricio; Das, Saptarshi.
In: ACS nano, Vol. 13, No. 1, 22.01.2019, p. 78-86.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electrochemical Polishing of Two-Dimensional Materials
AU - Sebastian, Amritanand
AU - Zhang, Fu
AU - Dodda, Akhil
AU - May-Rawding, Dan
AU - Liu, He
AU - Zhang, Tianyi
AU - Terrones Maldonado, Mauricio
AU - Das, Saptarshi
PY - 2019/1/22
Y1 - 2019/1/22
N2 - Two-dimensional (2D) layered materials demonstrate their exquisite properties such as high temperature superconductivity, superlubricity, charge density wave, piezotronics, flextronics, straintronics, spintronics, valleytronics, and optoelectronics, mostly, at the monolayer limit. Following initial breakthroughs based on micromechanically exfoliated 2D monolayers, significant progress has been made in recent years toward the bottom-up synthesis of large-area monolayer 2D materials such as MoS 2 and WS 2 using physical vapor deposition and chemical vapor deposition techniques in order to facilitate their transition into commercial technologies. However, the nucleation and subsequent growth of the secondary, tertiary, and greater numbers of vertical layers poses a significant challenge not only toward the realization of uniform monolayers but also toward maintaining their consistent electronic and optoelectronic properties which change abruptly when transitioning from the monolayer to multilayer form. Chemical or physical techniques which can remove the unwanted top layers without compromising the material quality will have tremendous consequences toward the development of atomically flat, large-area, uniform monolayers of 2D materials. Here, we report a simple, elegant, and self-limiting electrochemical polishing technique that can thin down any arbitrary thickness of 2D material, irrespective of whether these are obtained using powder vapor transport or mechanical exfoliation, into their corresponding monolayer form at room temperature within a few seconds without compromising their atomistic integrity. The effectiveness of this electrochemical polishing technique is inherent to 2D transition-metal dichalcogenides owing to the stability of their basal planes, enhanced edge reactivity, and stronger than van der Waals interaction with the substrate. Our study also reveals that 2D monolayers are chemically more robust and corrosion resistant compared to their bulk counterparts in similar oxidative environments, which enables electrochemical polishing of such materials down to a monolayer.
AB - Two-dimensional (2D) layered materials demonstrate their exquisite properties such as high temperature superconductivity, superlubricity, charge density wave, piezotronics, flextronics, straintronics, spintronics, valleytronics, and optoelectronics, mostly, at the monolayer limit. Following initial breakthroughs based on micromechanically exfoliated 2D monolayers, significant progress has been made in recent years toward the bottom-up synthesis of large-area monolayer 2D materials such as MoS 2 and WS 2 using physical vapor deposition and chemical vapor deposition techniques in order to facilitate their transition into commercial technologies. However, the nucleation and subsequent growth of the secondary, tertiary, and greater numbers of vertical layers poses a significant challenge not only toward the realization of uniform monolayers but also toward maintaining their consistent electronic and optoelectronic properties which change abruptly when transitioning from the monolayer to multilayer form. Chemical or physical techniques which can remove the unwanted top layers without compromising the material quality will have tremendous consequences toward the development of atomically flat, large-area, uniform monolayers of 2D materials. Here, we report a simple, elegant, and self-limiting electrochemical polishing technique that can thin down any arbitrary thickness of 2D material, irrespective of whether these are obtained using powder vapor transport or mechanical exfoliation, into their corresponding monolayer form at room temperature within a few seconds without compromising their atomistic integrity. The effectiveness of this electrochemical polishing technique is inherent to 2D transition-metal dichalcogenides owing to the stability of their basal planes, enhanced edge reactivity, and stronger than van der Waals interaction with the substrate. Our study also reveals that 2D monolayers are chemically more robust and corrosion resistant compared to their bulk counterparts in similar oxidative environments, which enables electrochemical polishing of such materials down to a monolayer.
UR - http://www.scopus.com/inward/record.url?scp=85058551198&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85058551198&partnerID=8YFLogxK
U2 - 10.1021/acsnano.8b08216
DO - 10.1021/acsnano.8b08216
M3 - Article
C2 - 30485063
AN - SCOPUS:85058551198
VL - 13
SP - 78
EP - 86
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 1
ER -