TY - JOUR
T1 - Electroless deposition of palladium films on gallium nitride for Schottky diodes
AU - Dail, Steven P.
AU - Molina, Alex
AU - Campbell, Ian E.
AU - Mughal, Asad J.
AU - Mohney, Suzanne E.
N1 - Funding Information:
This research was funded by the Office of Naval Research (Lynn Petersen) through Grant #N00014-18-1-2360. Approved, DCN# 43-8990-21, DISTRIBUTION STATEMENT A. approved for public release, distribution unlimited.
Funding Information:
The authors are grateful to Sandia National Laboratories (Andrew Allerman) for providing GaN epilayers.
Publisher Copyright:
© 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2022/4
Y1 - 2022/4
N2 - This work presents electroless deposition of palladium films onto gallium nitride from aqueous palladium dichloride using sodium L-ascorbate as the reducing agent in an acidic bath. Profilometry, four-point probe measurements, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy were used to measure film thickness, sheet resistance, resistivity, morphology, and composition. The resistivity of Pd was 1–3 × 10–5 Ω cm. Schottky diodes were produced from plated films, and the barrier heights and ideality factors were determined from current–voltage measurements. Average barrier heights were 1.13–1.26 eV, with ideality factors from 1.02 to 1.05, depending on the gallium nitride epilayer and substrate. A method for depositing palladium-gallium alloy films is also presented onto gold surfaces from palladium dichloride and gallium (III) sulfate using sodium hypophosphite as the reducing agent; however, palladium-gallium alloys were not readily deposited on gallium nitride.
AB - This work presents electroless deposition of palladium films onto gallium nitride from aqueous palladium dichloride using sodium L-ascorbate as the reducing agent in an acidic bath. Profilometry, four-point probe measurements, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy were used to measure film thickness, sheet resistance, resistivity, morphology, and composition. The resistivity of Pd was 1–3 × 10–5 Ω cm. Schottky diodes were produced from plated films, and the barrier heights and ideality factors were determined from current–voltage measurements. Average barrier heights were 1.13–1.26 eV, with ideality factors from 1.02 to 1.05, depending on the gallium nitride epilayer and substrate. A method for depositing palladium-gallium alloy films is also presented onto gold surfaces from palladium dichloride and gallium (III) sulfate using sodium hypophosphite as the reducing agent; however, palladium-gallium alloys were not readily deposited on gallium nitride.
UR - http://www.scopus.com/inward/record.url?scp=85124752923&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85124752923&partnerID=8YFLogxK
U2 - 10.1007/s10854-022-07907-5
DO - 10.1007/s10854-022-07907-5
M3 - Article
AN - SCOPUS:85124752923
SN - 0957-4522
VL - 33
SP - 7598
EP - 7605
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 10
ER -