Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots

Junseok Heo, Ting Zhu, Chunfeng Zhang, Jian Xu, Pallab Bhattacharya

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The characteristics of electrically injected silicon-based photonic crystal microcavities with PbSe quantum dots are described. The device includes suitable electron and hole transporting layers and contact layers. The measured electroluminescence at room temperature exhibits an enhanced spontaneous emission. The resonant mode is observed at λ= 1669 nm with a spectral linewidth of 4 nm, corresponding to a cavity Q factor of -420

Original languageEnglish (US)
Pages (from-to)547-549
Number of pages3
JournalOptics Letters
Volume35
Issue number4
DOIs
StatePublished - Feb 15 2010

Fingerprint

electroluminescence
quantum dots
photonics
silicon
spontaneous emission
crystals
Q factors
cavities
room temperature
electrons

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Heo, Junseok ; Zhu, Ting ; Zhang, Chunfeng ; Xu, Jian ; Bhattacharya, Pallab. / Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots. In: Optics Letters. 2010 ; Vol. 35, No. 4. pp. 547-549.
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Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots. / Heo, Junseok; Zhu, Ting; Zhang, Chunfeng; Xu, Jian; Bhattacharya, Pallab.

In: Optics Letters, Vol. 35, No. 4, 15.02.2010, p. 547-549.

Research output: Contribution to journalArticle

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