Electromagnetic modeling of phase - Shifting contact lithography by broadband ultraviolet illumination

Fei Wang, Katherine E. Weaver, Akhlesh Lakhtakia, Mark William Horn

Research output: Contribution to journalConference article

Abstract

Experiments have recently indicated that phase-shifting contact lithography (PSCL) could provide sub-wave-length resolution by using broadband ultraviolet sources of illumination. Electromagnetic modeling of PSCL is performed to characterize absorption features of the photoresist layer one of whose faces is in contact with a quartz binary phase-shift mask. The electromagnetic field of the broadband ultraviolet source is represented as a spectrum of normally incident plane waves, and a rigorous coupled-wave analysis is performed to determine spectral absorption in the photoresist layer. The specific absorption rate in the photoresist layer is calculated and examined in relation to the geometric parameters of experimental samples. As illustrated by the modeling, columnar features are formed in the photoresist layer due to the localization of absorption. Feature resolution and profile are noticeably affected by the phase-shift mask's thickness. Ideally, the feature linewidth can be less than 200 nm for transverse-magnetic mode illumination.

Original languageEnglish (US)
Article number29
Pages (from-to)195-202
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5515
DOIs
StatePublished - Dec 1 2004
EventNanoengineering: Fabrication, Properties, Optics, and Devices - Denver, CO, United States
Duration: Aug 4 2004Aug 6 2004

Fingerprint

Phase Shifting
Photoresist
Photoresists
Lithography
photoresists
Ultraviolet
Broadband
Illumination
Absorption
lithography
Lighting
illumination
Contact
electromagnetism
broadband
Phase Shift
Modeling
Phase shift
Mask
Masks

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

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abstract = "Experiments have recently indicated that phase-shifting contact lithography (PSCL) could provide sub-wave-length resolution by using broadband ultraviolet sources of illumination. Electromagnetic modeling of PSCL is performed to characterize absorption features of the photoresist layer one of whose faces is in contact with a quartz binary phase-shift mask. The electromagnetic field of the broadband ultraviolet source is represented as a spectrum of normally incident plane waves, and a rigorous coupled-wave analysis is performed to determine spectral absorption in the photoresist layer. The specific absorption rate in the photoresist layer is calculated and examined in relation to the geometric parameters of experimental samples. As illustrated by the modeling, columnar features are formed in the photoresist layer due to the localization of absorption. Feature resolution and profile are noticeably affected by the phase-shift mask's thickness. Ideally, the feature linewidth can be less than 200 nm for transverse-magnetic mode illumination.",
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Electromagnetic modeling of phase - Shifting contact lithography by broadband ultraviolet illumination. / Wang, Fei; Weaver, Katherine E.; Lakhtakia, Akhlesh; Horn, Mark William.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5515, 29, 01.12.2004, p. 195-202.

Research output: Contribution to journalConference article

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