Electromigration stress induced deformation mechanisms in free-standing platinum thin films

S. Kumar, M. T. Alam, Z. Connell, M. A. Haque

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


We present experimental evidence of anomalously high grain boundary mobility in 3-5 nm grain size platinum films at near room temperature. This mobility can be explained in terms of the localized electromigration stresses of the order of a few GPa that we observed. In the absence of conventional deformation mechanisms, the stress is relaxed through rapid grain growth up to a grain size of 40 nm. For larger grain sizes, grain boundary mobility is reduced as the stresses are relaxed by grain rotation and dislocation-based deformation mechanisms.

Original languageEnglish (US)
Pages (from-to)277-280
Number of pages4
JournalScripta Materialia
Issue number4
StatePublished - Aug 2011

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys


Dive into the research topics of 'Electromigration stress induced deformation mechanisms in free-standing platinum thin films'. Together they form a unique fingerprint.

Cite this