Electromigration stress induced deformation mechanisms in free-standing platinum thin films

S. Kumar, M. T. Alam, Z. Connell, Md Amanul Haque

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We present experimental evidence of anomalously high grain boundary mobility in 3-5 nm grain size platinum films at near room temperature. This mobility can be explained in terms of the localized electromigration stresses of the order of a few GPa that we observed. In the absence of conventional deformation mechanisms, the stress is relaxed through rapid grain growth up to a grain size of 40 nm. For larger grain sizes, grain boundary mobility is reduced as the stresses are relaxed by grain rotation and dislocation-based deformation mechanisms.

Original languageEnglish (US)
Pages (from-to)277-280
Number of pages4
JournalScripta Materialia
Volume65
Issue number4
DOIs
StatePublished - Aug 1 2011

Fingerprint

Electromigration
electromigration
Platinum
platinum
grain size
Thin films
Grain boundaries
thin films
grain boundaries
Grain growth
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

Cite this

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Electromigration stress induced deformation mechanisms in free-standing platinum thin films. / Kumar, S.; Alam, M. T.; Connell, Z.; Haque, Md Amanul.

In: Scripta Materialia, Vol. 65, No. 4, 01.08.2011, p. 277-280.

Research output: Contribution to journalArticle

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