Electron and phonon renormalization near charged defects in carbon nanotubes

Indhira O. MacIel, Neil Anderson, Marcos A. Pimenta, Achim Hartschuh, Huihong Qian, Mauricio Terrones, Humberto Terrones, Jessica Campos-Delgado, Apparao M. Rao, Lukas Novotny, Ado Jorio

Research output: Contribution to journalArticlepeer-review

219 Scopus citations

Abstract

Owing to their influence on electrons and phonons, defects can significantly alter electrical conductance, and optical, mechanical and thermal properties of a material. Thus, understanding and control of defects, including dopants in low-dimensional systems, hold great promise for engineered materials and nanoscale devices. Here, we characterize experimentally the effects of a single defect on electrons and phonons in single-wall carbon nanotubes. The effects demonstrated here are unusual in that they are not caused by defect-induced symmetry breaking. Electrons and phonons are strongly coupled in sp2 carbon systems, and a defect causes renormalization of electron and phonon energies. We find that near a negatively charged defect, the electron velocity is increased, which in turn influences lattice vibrations locally. Combining measurements on nanotube ensembles and on single nanotubes, we capture the relation between atomic response and the readily accessible macroscopic behaviour.

Original languageEnglish (US)
Pages (from-to)878-883
Number of pages6
JournalNature Materials
Volume7
Issue number11
DOIs
StatePublished - Nov 16 2008

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Electron and phonon renormalization near charged defects in carbon nanotubes'. Together they form a unique fingerprint.

Cite this