Electron field emission from diamond grown by laser QQC process

A. Badzian, B. L. Weiss, R. Roy, T. Badzian, W. Drawl, P. Mistry, M. C. Turchan

Research output: Contribution to conferencePaper

4 Scopus citations

Abstract

A new diamond deposition process utilizing a plasma and a variety of interactions from a multiple laser system has been demonstrated, with WC/Co substrates. The process is conducted in open air and does not involve hydrogen. Structural characterization of the diamond coatings, which have exceptional adhesion to cutting tool inserts, indicates a cubic diamond structure. Tungsten and cobalt atoms are incorporated into the film and a layer depleted in cobalt exists at the diamond-WC/Co interface. Electron field emission current densities reached 6mA/cm2 at an applied voltage of 3000 V for a film-anode distance 20 μm.

Original languageEnglish (US)
Pages546-550
Number of pages5
Publication statusPublished - Dec 1 1997
EventProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea
Duration: Aug 17 1997Aug 21 1997

Other

OtherProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
CityKyongju, Korea
Period8/17/978/21/97

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces

Cite this

Badzian, A., Weiss, B. L., Roy, R., Badzian, T., Drawl, W., Mistry, P., & Turchan, M. C. (1997). Electron field emission from diamond grown by laser QQC process. 546-550. Paper presented at Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97, Kyongju, Korea, .