Electron microscopy of GaAs/MnAs core/shell nanowires

N. S. Dellas, J. Liang, B. J. Cooley, N. Samarth, S. E. Mohney

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

GaAs/MnAs core/shell nanowire heterostructures were synthesized by catalyst-free molecular beam epitaxy. Transmission electron microscopy (TEM) reveals that the GaAs core predominantly grows with the zinc-blende crystal structure with a [111] growth direction. In a small population of wires, the crystal structure transitions from zinc blende to wurtzite with a [001] growth direction. Cross-sectional TEM shows that the MnAs grows epitaxially on the GaAs core in the NiAs prototype structure with an epitaxial relation of [̄2021] MnAs∥[111] GaAs and (̄0110) MnAs∥GaAs (̄110). When the GaAs core is in the wurtzite structure, the epitaxial relation between the GaAs and MnAs changes to [0001] MnAs∥[0001] GaAs and (̄1210) MnAs (̄1210) GaAs.

Original languageEnglish (US)
Article number072505
JournalApplied Physics Letters
Volume97
Issue number7
DOIs
StatePublished - Aug 16 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Electron microscopy of GaAs/MnAs core/shell nanowires'. Together they form a unique fingerprint.

Cite this