Electron spin resonance and instabilities in metal insulator semiconductor systems

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

Electron spin resonance measurements combined with electrical measurements provide an "atomic scale" understanding of trapping centers in amorphous insulating thin films and their interfaces with silicon.

Original languageEnglish (US)
Pages (from-to)129-138
Number of pages10
JournalMicroelectronic Engineering
Volume22
Issue number1-4
DOIs
StatePublished - Jan 1 1993

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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