Electron spin resonance characterization of Unibond material

J. F. Conley, Patrick M. Lenahan, B. D. Wallace

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


Unibond is the latest addition to the silicon-on-insulator (SOI) technology which combines the best of SIMOX and BESOI. The process involves four major steps: hydrogen implantation into a thermally grown SiO2 capped Si wafer; cleaning and bonding with a second Si wafer, two-step annealing at 400 to 600 °C to split at the boundary defined by the implant and at 1100 °C to strengthen the bond interface; and fine polishing to remove the microroughness. Electron spin resonance (ESR) was used to study the physical nature of the defect structures for the charge trapping properties of the Unibond films. ESR provides structural information and allows testing of minimally processed structures making it ideal for studying the charge trapping in SiO2 films.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Number of pages2
StatePublished - 1996
EventProceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA
Duration: Sep 30 1996Oct 3 1996


OtherProceedings of the 1996 IEEE International SOI Conference
CitySanibel Island, FL, USA

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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