Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si

John F. Conley; Patrick M. Lenahan; H. L. Evans; R. K. Lowry; T. J. Morthorst

doi:10.1063/1.357871

Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO₂ on Si

John F. Conley, Patrick M. Lenahan, H. L. Evans, R. K. Lowry, T. J. Morthorst

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO₂ films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO₂ defect centers.

Original language	English (US)
Pages (from-to)	8186-8188
Number of pages	3
Journal	Journal of Applied Physics
Volume	76
Issue number	12
DOIs	https://doi.org/10.1063/1.357871
State	Published - Dec 1 1994

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.357871

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title = "Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si",

abstract = "Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers.",

author = "Conley, {John F.} and Lenahan, {Patrick M.} and Evans, {H. L.} and Lowry, {R. K.} and Morthorst, {T. J.}",

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AU - Conley, John F.

AU - Lenahan, Patrick M.

AU - Evans, H. L.

AU - Lowry, R. K.

AU - Morthorst, T. J.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers.

AB - Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers.

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