Abstract
Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers.
Original language | English (US) |
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Pages (from-to) | 8186-8188 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 76 |
Issue number | 12 |
DOIs | |
State | Published - 1994 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)