Abstract
Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 8186-8188 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 76 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 1 1994 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Conley, J. F., Lenahan, P. M., Evans, H. L., Lowry, R. K., & Morthorst, T. J. (1994). Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si. Journal of Applied Physics, 76(12), 8186-8188. https://doi.org/10.1063/1.357871