Abstract
Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 8186-8188 |
| Number of pages | 3 |
| Journal | Journal of Applied Physics |
| Volume | 76 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 1 1994 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
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Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si. / Conley, John F.; Lenahan, Patrick M.; Evans, H. L.; Lowry, R. K.; Morthorst, T. J.
In: Journal of Applied Physics, Vol. 76, No. 12, 01.12.1994, p. 8186-8188.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si
AU - Conley, John F.
AU - Lenahan, Patrick M.
AU - Evans, H. L.
AU - Lowry, R. K.
AU - Morthorst, T. J.
PY - 1994/12/1
Y1 - 1994/12/1
N2 - Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers.
AB - Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers.
UR - http://www.scopus.com/inward/record.url?scp=36449003367&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36449003367&partnerID=8YFLogxK
U2 - 10.1063/1.357871
DO - 10.1063/1.357871
M3 - Article
VL - 76
SP - 8186
EP - 8188
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 12
ER -