Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO₂ on Si

Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO₂ films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO₂ defect centers.