Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si

John F. Conley, Patrick M. Lenahan, H. L. Evans, R. K. Lowry, T. J. Morthorst

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ESR inactive). The g-tensor values, symmetry, and microwave power saturation characteristics are all similar to those of the well-known E' family of amorphous SiO2 defect centers.

Original languageEnglish (US)
Pages (from-to)8186-8188
Number of pages3
JournalJournal of Applied Physics
Volume76
Issue number12
DOIs
StatePublished - Dec 1 1994

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electron paramagnetic resonance
trapping
impurities
defects
absorption cross sections
point defects
tensors
saturation
microwaves
symmetry
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Conley, John F. ; Lenahan, Patrick M. ; Evans, H. L. ; Lowry, R. K. ; Morthorst, T. J. / Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si. In: Journal of Applied Physics. 1994 ; Vol. 76, No. 12. pp. 8186-8188.
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Electron-spin-resonance evidence for an impurity-related E'-like hole trapping defect in thermally grown SiO2 on Si. / Conley, John F.; Lenahan, Patrick M.; Evans, H. L.; Lowry, R. K.; Morthorst, T. J.

In: Journal of Applied Physics, Vol. 76, No. 12, 01.12.1994, p. 8186-8188.

Research output: Contribution to journalArticle

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