Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO 2

John F. Conley, Patrick M. Lenahan, Aivars J. Lelis, Timothy R. Oldham

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can]] switch" charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect transistor. Electron spin resonance measurements reveal that some Eγ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

Original languageEnglish (US)
Pages (from-to)2179
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1995

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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