We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can]] switch" charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect transistor. Electron spin resonance measurements reveal that some Eγ′ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)