Electron spin resonance evidence for the structure of a switching oxide trap

Long term structural change at silicon dangling bond sites in SiO 2

John F. Conley, Patrick M. Lenahan, Aivars J. Lelis, Timothy R. Oldham

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can]] switch" charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect transistor. Electron spin resonance measurements reveal that some Eγ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - Dec 1 1995

Fingerprint

electron paramagnetic resonance
traps
oxides
silicon
metal oxide semiconductors
field effect transistors
switches
electric potential
oxygen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Electron spin resonance evidence for the structure of a switching oxide trap : Long term structural change at silicon dangling bond sites in SiO 2. / Conley, John F.; Lenahan, Patrick M.; Lelis, Aivars J.; Oldham, Timothy R.

In: Applied Physics Letters, Vol. 67, 01.12.1995.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Conley, John F.

AU - Lenahan, Patrick M.

AU - Lelis, Aivars J.

AU - Oldham, Timothy R.

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N2 - We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can]] switch" charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect transistor. Electron spin resonance measurements reveal that some Eγ′ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

AB - We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can]] switch" charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect transistor. Electron spin resonance measurements reveal that some Eγ′ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

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