Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO 2

John F. Conley, Patrick M. Lenahan, Aivars J. Lelis, Timothy R. Oldham

Research output: Contribution to journalArticle

45 Scopus citations

Abstract

We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can]] switch" charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect transistor. Electron spin resonance measurements reveal that some Eγ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

Original languageEnglish (US)
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - Dec 1 1995

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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