Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps

John F. Conley, Patrick M. Lenahan, Aivars J. Lelis, Timothy R. Oldham

Research output: Contribution to journalArticle

75 Scopus citations

Abstract

We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

Original languageEnglish (US)
Pages (from-to)1744-1749
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume42
Issue number6
DOIs
StatePublished - Dec 1995

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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