Abstract
We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1744-1749 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 42 |
| Issue number | 6 |
| DOIs | |
| State | Published - Dec 1995 |
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All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering
Cite this
}
Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps. / Conley, John F.; Lenahan, Patrick M.; Lelis, Aivars J.; Oldham, Timothy R.
In: IEEE Transactions on Nuclear Science, Vol. 42, No. 6, 12.1995, p. 1744-1749.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps
AU - Conley, John F.
AU - Lenahan, Patrick M.
AU - Lelis, Aivars J.
AU - Oldham, Timothy R.
PY - 1995/12
Y1 - 1995/12
N2 - We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.
AB - We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.
UR - http://www.scopus.com/inward/record.url?scp=0029518434&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029518434&partnerID=8YFLogxK
U2 - 10.1109/23.488774
DO - 10.1109/23.488774
M3 - Article
AN - SCOPUS:0029518434
VL - 42
SP - 1744
EP - 1749
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
SN - 0018-9499
IS - 6
ER -