Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps

John F. Conley; Patrick M. Lenahan; Aivars J. Lelis; Timothy R. Oldham

doi:10.1109/23.488774

Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps

John F. Conley, Patrick M. Lenahan, Aivars J. Lelis, Timothy R. Oldham

Research output: Contribution to journal › Article › peer-review

76 Scopus citations

Abstract

We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

Original language	English (US)
Pages (from-to)	1744-1749
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	42
Issue number	6
DOIs	https://doi.org/10.1109/23.488774
State	Published - Dec 1995

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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title = "Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps",

abstract = "We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.",

author = "Conley, {John F.} and Lenahan, {Patrick M.} and Lelis, {Aivars J.} and Oldham, {Timothy R.}",

note = "Funding Information: Acknowledgment: We gratefully acknowledge support of the Defense Nuclear Agency and the Office of Naval Research, Copyright: Copyright 2015 Elsevier B.V., All rights reserved.",

year = "1995",

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doi = "10.1109/23.488774",

language = "English (US)",

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pages = "1744--1749",

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T1 - Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps

AU - Conley, John F.

AU - Lenahan, Patrick M.

AU - Lelis, Aivars J.

AU - Oldham, Timothy R.

N1 - Funding Information: Acknowledgment: We gratefully acknowledge support of the Defense Nuclear Agency and the Office of Naval Research, Copyright: Copyright 2015 Elsevier B.V., All rights reserved.

PY - 1995/12

Y1 - 1995/12

N2 - We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

AB - We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

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JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

ER -

Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps

Abstract

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