Abstract
We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.
Original language | English (US) |
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Pages (from-to) | 1744-1749 |
Number of pages | 6 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 42 |
Issue number | 6 |
DOIs | |
State | Published - Dec 1995 |
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering