Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps

John F. Conley, Patrick M. Lenahan, Aivars J. Lelis, Timothy R. Oldham

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

Original languageEnglish (US)
Pages (from-to)1744-1749
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume42
Issue number6
DOIs
StatePublished - Dec 1995

Fingerprint

Paramagnetic resonance
electron paramagnetic resonance
traps
Oxides
oxides
MOSFET devices
Oxygen vacancies
metal oxide semiconductors
field effect transistors
Switches
Electric potential
electric potential
oxygen

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Conley, John F. ; Lenahan, Patrick M. ; Lelis, Aivars J. ; Oldham, Timothy R. / Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps. In: IEEE Transactions on Nuclear Science. 1995 ; Vol. 42, No. 6. pp. 1744-1749.
@article{9c63ca2d293d4d3681035371f9a7c6f5,
title = "Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps",
abstract = "We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.",
author = "Conley, {John F.} and Lenahan, {Patrick M.} and Lelis, {Aivars J.} and Oldham, {Timothy R.}",
year = "1995",
month = "12",
doi = "10.1109/23.488774",
language = "English (US)",
volume = "42",
pages = "1744--1749",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps. / Conley, John F.; Lenahan, Patrick M.; Lelis, Aivars J.; Oldham, Timothy R.

In: IEEE Transactions on Nuclear Science, Vol. 42, No. 6, 12.1995, p. 1744-1749.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps

AU - Conley, John F.

AU - Lenahan, Patrick M.

AU - Lelis, Aivars J.

AU - Oldham, Timothy R.

PY - 1995/12

Y1 - 1995/12

N2 - We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

AB - We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E'γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.

UR - http://www.scopus.com/inward/record.url?scp=0029518434&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029518434&partnerID=8YFLogxK

U2 - 10.1109/23.488774

DO - 10.1109/23.488774

M3 - Article

AN - SCOPUS:0029518434

VL - 42

SP - 1744

EP - 1749

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

ER -