Electron spin resonance investigation of hole trapping in reoxidized nitrided silicon dioxide

I. A. Chaiyasena, P. M. Lenahan, G. J. Dunn

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Radiation-induced hole trapping in reoxidized nitrided silicon dioxide (RNO) was studied with electron spin resonance spectroscopy. It is demonstrated that the dominant hole trap in RNO is not the well known E' center of conventional oxides. This finding confirms our earlier speculation, based on detrapping experiments, that the dominant hole trap in RNO is a species distinctly different from that in conventional oxide.

Original languageEnglish (US)
Pages (from-to)820-821
Number of pages2
JournalJournal of Applied Physics
Volume72
Issue number2
DOIs
StatePublished - Dec 1 1992

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Electron spin resonance investigation of hole trapping in reoxidized nitrided silicon dioxide'. Together they form a unique fingerprint.

  • Cite this