Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si

A. Y. Kang, P. M. Lenahan, J. F. Conley

Research output: Contribution to journalArticlepeer-review

99 Scopus citations

Abstract

The significance of electron spin resonance for studying electron trapping in hafnium oxide on silicon was discussed. Two paramagnetic defects were observed after the photoinjection of electrons into the dielectric. The use of electron injection procedure for the electron spin resonance measurements and for the current-voltage measurements was also analyzed.

Original languageEnglish (US)
Pages (from-to)3407-3409
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number16
DOIs
StatePublished - Oct 20 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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